Nonvolatile RAM Controller

Please check latest availability status for a specific part variant.


The MXD1210 nonvolatile RAM controller is a very low-power CMOS circuit that converts standard (volatile) CMOS RAM into nonvolatile memory. It also continually monitors the power supply to provide RAM write protection when power to the RAM is in a marginal (out-of-tolerance) condition. When the power supply begins to fail, the RAM is write protected, and the device switches to battery-backup mode.
MXD1210: Typical Operating Circuit MXD1210: Typical Operating Circuit Enlarge+

Key Features

  • Battery Backup
  • Memory Write Protection
  • 230µA Operating-Mode Quiescent Current
  • 2nA Backup-Mode Quiescent Current
  • Battery Freshness Seal
  • Optional Redundant Battery
  • Low Forward-Voltage Drop on VCC Supply Switch
  • 5% or 10% Power-Fail Detection Options
  • Tests Battery Condition During Power-Up
  • 8-Pin SO Available


  • µP-Controlled Systems
  • Computers: Desktop, Workstation, Server
  • Embedded Systems

See parametric specs for Battery Backup Circuits (80)

Part NumberReset Thresh.
Reset OutICC
Oper. Temp.
maxSee Notes
MXD1210 3.3 to 5.5No500
-55 to +125
-40 to +85
0 to +70
SOIC (N)/8
SOIC (W)/16
$3.64 @1k

Pricing Notes:
This pricing is BUDGETARY, for comparing similar parts. Prices are in U.S. dollars and subject to change. Quantity pricing may vary substantially and international prices may differ due to local duties, taxes, fees, and exchange rates. For volume-specific and version-specific prices and delivery, please see the price and availability page or contact an authorized distributor.

See parametric specs for Non-Volatile RAM Controllers (6)

Part NumberCE Cntrl.Smart Socket w/Int. Batt.Li Batt. MonitorPwr. Fail OutRAMs ControlledVSUPPLY
MXD1210 YesNoNoNo15
SOIC (N)/8
SOIC (W)/16
Product Reliability Reports: MXD1210.pdf 
Device   Fab Process   Technology   Sample size   Rejects   FIT at 25°C   FIT at 55°C   Material Composition  

Note : The failure rates are summarized by technology and mapped to the associated material part numbers. The failure rates are highly dependent on the number of units tested.

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