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Ultra-High CMTI Isolated Gate Drivers

Integrated Isolation with High CMTI to Improve Robustness for SiC Gate Driver

Product Details

Key Features

Parametric specs for Isolated Gate Drivers
# Channels 1
Inputs Single-Ended
Peak Output Current (A) (typ) 3
Insulation Rating 3000VRMS
CMTI (kV/µs) (typ) 300
UVLO Threshold (V) 13
Oper. Temp. (°C) -40 to +125
Package/Pins SOIC (N)/8
Budgetary
Price (See Notes)
1.79
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Parameters

Parametric specs for Isolated Gate Drivers
# Channels 1
Inputs Single-Ended
Peak Output Current (A) (typ) 3
Insulation Rating 3000VRMS
CMTI (kV/µs) (typ) 300
UVLO Threshold (V) 13
Oper. Temp. (°C) -40 to +125
Package/Pins SOIC (N)/8
Budgetary
Price (See Notes)
1.79

Key Features

  • Matching Propagation Delay
    • 20ns Minimum Pulse Width
    • 35ns Propagation Delay at Room Temperature
    • 2ns Part-to-Part Propagation Delay Matching at Room Temperature
    • 5ns Part-to-Part Propagation Delay Matching over -40°C to +125°C Temperature Range
  • High CMTI (300kV/µs, typ)
  • Robust Galvanic Isolation
    • Withstands 3kVRMS (Narrow SOIC) or 5kVRMS (Wide SOIC) for 60s (VISO)
    • Continuously Withstands 600VRMS (Narrow SOIC) or 848VRMS (Wide SOIC) (VIOWM)
    • Withstands ±5kV Surge Between GNDA and VSSB with 1.2/50µs Waveform
  • Precision UVLO
  • Options to Support a Broad Range of Applications
    • 3 Output Options: GNDB, Miller Clamp, or Adjustable UVLO
    • 2 Input Configurations: Single-Ended with Enable (E versions) or Differential (D versions)

Applications/Uses

  • Isolated Gate Driver for Inverters
  • Motor Drives
  • UPS and PV Inverters

Description

The MAX22700–MAX22702 are a family of single-channel isolated gate drivers with ultra-high common-mode transient immunity (CMTI) of 300kV/µs (typ). TThe devices are designed to drive silicon-carbide (SiC) or gallium-nitride (GaN) transistors in various inverter or motor control applications with different output gate-drive circuitry and B-side supply voltages. The devices feature variants with output options for gate driver common pin GNDB (MAX22700), Miller Clamp (MAX22701), and adjustable undervoltagelockout UVLO (MAX22702). In addition, variants are offered as differential (D versions) or single-ended (E versions) inputs. All devices have integrated digital galvanic isolation using Maxim’s proprietary process technology. The MAX22700–MAX22702 feature isolation for a withstand voltage rating of 3kVRMS (narrow SOIC package) or 5kVRMS (wide SOIC package) for 60 seconds.

All devices support a minimum pulse width of 20ns with a maximum pulse width distortion of 2ns. The part-to-part propagation delay is matched within 2ns (max) at +25°C ambient temperature, and 5ns (max) over the -40°C to +125°C operating temperature range. This feature reduces the power transistor’s dead time, thus improving overall efficiency.

The MAX22700 and the MAX22702 have a maximum RDSON of 1.25Ω for the low-side driver, and the MAX22701 has an RDSON of 2.5Ω for the low-side driver. All devices have a maximum RDSON of 4.5Ω for the high-side driver. See the Ordering Information for suffixes associated with each option.

The MAX22700–MAX22702 are available either in an 8-pin wide-body SOIC package with 8mm creepage and clearance, or in a smaller 8-pin narrow-body SOIC package with 4mm of creepage and clearance. The narrow SOIC package material has a minimum comparative tracking index (CTI) of 600, which gives it a group I rating in creepage tables, while the wide SOIC package material has a minimum CTI of 400, which gives it a group II rating in creepage tables. All devices are rated for operation at ambient temperatures of -40°C to +125°C.

Design Solution: Choose a High CMTI Gate Driver That Cuts Your SiC Switch Dead-Time ›

Simplified Block Diagram

Technical Docs

Support & Training

Search our knowledge base for answers to your technical questions.

Filtered Search

Our dedicated team of Applications Engineers are also available to answer your technical questions. Visit our support portal .