Flexible NV SRAM Stik

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The DS2227 combines voltage monitoring circuitry with lithium-backed memory in a flexible architecture that can be accessed as 128k x 32, 256k x 16, or 512k x 8 bits.

Using precise comparators, the DS2227 monitors incoming Vcc for an out-or-tolerance condition. When such a condition occurs, the internal lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

While the DS2227 is used like a standard static RAM, it can be flexibly configured by virtue of separate read, write, and chip-select bits for each of the four memory banks.

Dallas' nonvolatile memory chips are known throughout the industry for low-power consumption. They render data nonvolatile for greater than 10 years in the absence of power, greater than the useful like of the associated equipment.
DS2227: Pin Assignment DS2227: Pin Assignment Enlarge+

Key Features

  • Memory with flexible architecture:
    • 128k x 32
    • 256k x 16
    • 512k x 8
  • NV circuitry transparent to/independent of host
  • Automatic write protection circuitry
  • Separate chip-enables for access by byte, word, or long word
  • Access times: 70ns, 100ns, or 120ns
  • Unlimited write cycles
  • Equal read/write cycle times
  • JEDEC-standard 72-position SIMM connection
  • Lithium source with freshness seal
  • Operating ranges:
    • 5V±10% tolerance
    • 0°C to 70°C

Technical Documents

App Note 3759 Timing Considerations When Using NVSRAM

Quality and Environmental Data

Request Reliability Report for: DS2227 
Lead-Free Package Tin (Sn) Whisker Reports
Device   Fab Process   Technology   Sample size   Rejects   FIT at 25°C   FIT at 55°C  

Note : The failure rates are summarized by technology and mapped to the associated material part numbers. The failure rates are highly dependent on the number of units tested.

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