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Gamma Radiation Resistant 1-Wire Memory

Low-Cost Identification or Calibration Solution for Medical Sensors and Accessories with Single-Contact Operation

Product Details

Key Features

Parametric specs for Secure Authenticators
End Equipment Medical Consumable ID
Bus Type 1-Wire
Memory Type EEPROM
Memory Size 2K x 1
Oper. Temp. (°C) -40 to +85
Package/Pins TDFN HYBRID/6
Parametric specs for Memory (EPROM, EEPROM, ROM, NV SRAM)
End Equipment Gamma Sterilization
Medical Consumable ID
Memory Type EEPROM
Memory Size 2K x 1
Bus Type 1-Wire
VSUPPLY (V) (min) 2.97
VSUPPLY (V) (max) 3.63
Package/Pins TDFN HYBRID/6
Budgetary
Price (See Notes)
0.92
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Simplified Block Diagram

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Parameters

Parametric specs for Secure Authenticators
End Equipment Medical Consumable ID
Bus Type 1-Wire
Memory Type EEPROM
Memory Size 2K x 1
Oper. Temp. (°C) -40 to +85
Package/Pins TDFN HYBRID/6
Parametric specs for Memory (EPROM, EEPROM, ROM, NV SRAM)
End Equipment Gamma Sterilization
Medical Consumable ID
Memory Type EEPROM
Memory Size 2K x 1
Bus Type 1-Wire
VSUPPLY (V) (min) 2.97
VSUPPLY (V) (max) 3.63
Package/Pins TDFN HYBRID/6
Budgetary
Price (See Notes)
0.92

Key Features

  • High Gamma Resistance Allows User-Programmable Manufacturing or Calibration Data Before Medical Sterilization
    • Resistant Up to 75kGy (kiloGray) of Gamma Radiation
    • Reprogrammable 248 Bytes of User Memory
  • Lower Block Size Provides Greater Flexibility in Programming User Memory
    • Memory is Organized as 8-Byte Blocks
    • Each Block Can Be Written 8 Times
    • User-Programmable Write Protection for Individual Memory Blocks
  • Advanced 1-Wire Protocol Minimizes Interface to Just Single Contact
  • Compact Package and Single IO Interface Reduces Board Space and Enhances Reliability
    • Unique Factory-Programmed, 64-Bit Identification Number
    • Communicates at 1-Wire Standard Speed (15.3kbps max) and Overdrive Speed (76kbps max)
    • Operating Range: 3.3V ±10%, -40°C to + 85°C Reading, 0°C to +50°C Writing
    • ±8kV HBM ESD Protection (typ) for IO Pin
    • 6-Pin TDFN Package

Applications/Uses

  • Identification and Calibration Medical Tools/Accessories
  • Identification of Medical Consumables

Description

The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. The DS28E80 communicates over the single-contact 1-Wire® bus at standard speed or overdrive speed. Each device has its own guaranteed unique 64-bit registration number that is factory programmed into the chip. The communication follows the 1-Wire protocol with a 64-bit registration number acting as node address in the case of a multiple-device 1-Wire network.

Simplified Block Diagram

DS28E80: Typical Operating Circuit DS28E80: Typical Operating Circuit Zoom icon

Support & Training

Search our knowledge base for answers to your technical questions.

Filtered Search

Our dedicated team of Applications Engineers are also available to answer your technical questions. Visit our support portal .