DS1265W

3.3V 8Mb Nonvolatile SRAM


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Description

The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8-bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
DS1265W: Pin Assignment DS1265W: Pin Assignment Enlarge+

Key Features

  • 10 years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Unlimited write cycles
  • Low-power CMOS operation
  • Read and write access times of 100ns
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
  • Optional industrial (IND) temperature range of -40°C to +85°C
Product Reliability Reports: DS1265W.pdf 
Device   Fab Process   Technology   Sample size   Rejects   FIT at 25°C   FIT at 55°C   Material Composition  

Note : The failure rates are summarized by technology and mapped to the associated material part numbers. The failure rates are highly dependent on the number of units tested.

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