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3.3V 8Mb Nonvolatile SRAM

Product Details

Key Features

Simplified Block Diagram

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Sampling:
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Key Features

  • 10 years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Unlimited write cycles
  • Low-power CMOS operation
  • Read and write access times of 100ns
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
  • Optional industrial (IND) temperature range of -40°C to +85°C

Applications/Uses

Description

The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8-bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Simplified Block Diagram

DS1265W: Pin Assignment DS1265W: Pin Assignment Zoom icon

Technical Docs

Support & Training

Search our knowledge base for answers to your technical questions.

Filtered Search

Our dedicated team of Applications Engineers are also available to answer your technical questions. Visit our support portal .

Sampling:
Selecting the Sample button above will redirect to the third-party ADI Sample Site. The part selected will carry over to your cart on this site once logged in. Please create a new account there if you have never used the site before. Contact SampleSupport@analog.com with any questions regarding this Sample Site.