Top
Maxim Confidential 
MyMaxim SubscriptionsProduct Details
The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
Key Features
- 10 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Directly replaces 2k x 8 volatile static RAM or EEPROM
- Unlimited write cycles
- Low-power CMOS
- JEDEC standard 24-pin DIP package
- Read and write access times of 100ns
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
- Full ±10% VCC operating range (DS1220AD)
- Optional ±5% VCC operating range (DS1220AB)
- Optional industrial temperature range of -40°C to +85°C, designated IND
Applications/Uses
Parametric specs for Memory (EPROM, EEPROM, ROM, NV SRAM)
| Memory Type | NV SRAM |
| Memory Size | 2K x 8 |
| Bus Type | Parallel |
| VSUPPLY (V) (min) | 4.75 |
| VSUPPLY (V) (max) | 5.25 |
| Package/Pins | MOD/24 |
| Budgetary Price (See Notes) | $8.58 @1k |
View More
Technical Docs
| Data Sheet | 16k Nonvolatile SRAM | Oct 21, 2010 | |
| App Note | Lithium Battery Content in Maxim Products | ||
| App Note | Substitution Rules for Nonvolatile Memory Components | ||
| App Note | How to Replace a DS1213 SmartSocket with an Equivalent-Density NV SRAM Module | ||
| App Note | Low-Temperature Data Retention in Nonvolatile SRAM | ||
| App Note | NV SRAM Device Programmers | ||
| App Note | Timing Considerations When Using NVSRAM | ||
| App Note | Tech. Brief 39: NV SRAM Cross Reference Table | ||
| App Note | NV SRAM Frequently Asked Questions |
Click any title below to view the detail page where available.
Support & Training
Search our knowledge base for answers to your technical questions.
Filtered SearchOur dedicated team of Applications Engineers are also available to answer your technical questions. Visit our support portal
Parameters
Parametric specs for Memory (EPROM, EEPROM, ROM, NV SRAM)
| Memory Type | NV SRAM |
| Memory Size | 2K x 8 |
| Bus Type | Parallel |
| VSUPPLY (V) (min) | 4.75 |
| VSUPPLY (V) (max) | 5.25 |
| Package/Pins | MOD/24 |
| Budgetary Price (See Notes) | $8.58 @1k |
Key Features
- 10 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Directly replaces 2k x 8 volatile static RAM or EEPROM
- Unlimited write cycles
- Low-power CMOS
- JEDEC standard 24-pin DIP package
- Read and write access times of 100ns
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
- Full ±10% VCC operating range (DS1220AD)
- Optional ±5% VCC operating range (DS1220AB)
- Optional industrial temperature range of -40°C to +85°C, designated IND
Applications/Uses
Description
The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
Technical Docs
| Data Sheet | 16k Nonvolatile SRAM | Oct 21, 2010 | |
| App Note | Lithium Battery Content in Maxim Products | ||
| App Note | Substitution Rules for Nonvolatile Memory Components | ||
| App Note | How to Replace a DS1213 SmartSocket with an Equivalent-Density NV SRAM Module | ||
| App Note | Low-Temperature Data Retention in Nonvolatile SRAM | ||
| App Note | NV SRAM Device Programmers | ||
| App Note | Timing Considerations When Using NVSRAM | ||
| App Note | Tech. Brief 39: NV SRAM Cross Reference Table | ||
| App Note | NV SRAM Frequently Asked Questions |
Support & Training
Search our knowledge base for answers to your technical questions.
Filtered SearchOur dedicated team of Applications Engineers are also available to answer your technical questions. Visit our support portal
Request a Quote