Product Details
Key Features
- 10 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Directly replaces 2k x 8 volatile static RAM or EEPROM
- Unlimited write cycles
- Low-power CMOS
- JEDEC standard 24-pin DIP package
- Read and write access times of 100ns
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
- Full ±10% VCC operating range (DS1220AD)
- Optional ±5% VCC operating range (DS1220AB)
- Optional industrial temperature range of -40°C to +85°C, designated IND
Applications/Uses
Memory Type | NV SRAM |
Memory Size | 2K x 8 |
Bus Type | Parallel |
VSUPPLY (V) (min) | 4.75 |
VSUPPLY (V) (max) | 5.25 |
Package/Pins | MOD/24 |
Budgetary Price (See Notes) | $8.58 @1k |
Technical Docs
Data Sheet | 16k Nonvolatile SRAM | Oct 21, 2010 | |
App Note | Lithium Battery Content in Maxim Products | ||
App Note | Substitution Rules for Nonvolatile Memory Components | ||
App Note | How to Replace a DS1213 SmartSocket with an Equivalent-Density NV SRAM Module | ||
App Note | Low-Temperature Data Retention in Nonvolatile SRAM | ||
App Note | NV SRAM Device Programmers | ||
App Note | Timing Considerations When Using NVSRAM | ||
App Note | Tech. Brief 39: NV SRAM Cross Reference Table | ||
App Note | NV SRAM Frequently Asked Questions |
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Support & Training
Search our knowledge base for answers to your technical questions.
Filtered SearchOur dedicated team of Applications Engineers are also available to answer your technical questions. Visit our support portal
Parameters
Memory Type | NV SRAM |
Memory Size | 2K x 8 |
Bus Type | Parallel |
VSUPPLY (V) (min) | 4.75 |
VSUPPLY (V) (max) | 5.25 |
Package/Pins | MOD/24 |
Budgetary Price (See Notes) | $8.58 @1k |
Key Features
- 10 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Directly replaces 2k x 8 volatile static RAM or EEPROM
- Unlimited write cycles
- Low-power CMOS
- JEDEC standard 24-pin DIP package
- Read and write access times of 100ns
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
- Full ±10% VCC operating range (DS1220AD)
- Optional ±5% VCC operating range (DS1220AB)
- Optional industrial temperature range of -40°C to +85°C, designated IND
Applications/Uses
Description
Technical Docs
Data Sheet | 16k Nonvolatile SRAM | Oct 21, 2010 | |
App Note | Lithium Battery Content in Maxim Products | ||
App Note | Substitution Rules for Nonvolatile Memory Components | ||
App Note | How to Replace a DS1213 SmartSocket with an Equivalent-Density NV SRAM Module | ||
App Note | Low-Temperature Data Retention in Nonvolatile SRAM | ||
App Note | NV SRAM Device Programmers | ||
App Note | Timing Considerations When Using NVSRAM | ||
App Note | Tech. Brief 39: NV SRAM Cross Reference Table | ||
App Note | NV SRAM Frequently Asked Questions |
Support & Training
Search our knowledge base for answers to your technical questions.
Filtered SearchOur dedicated team of Applications Engineers are also available to answer your technical questions. Visit our support portal