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16k Nonvolatile SRAM

Product Details

The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Key Features

  • 10 years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Directly replaces 2k x 8 volatile static RAM or EEPROM
  • Unlimited write cycles
  • Low-power CMOS
  • JEDEC standard 24-pin DIP package
  • Read and write access times of 100ns
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
  • Full ±10% VCC operating range (DS1220AD)
  • Optional ±5% VCC operating range (DS1220AB)
  • Optional industrial temperature range of -40°C to +85°C, designated IND

Applications/Uses

Parametric specs for Memory (EPROM, EEPROM, ROM, NV SRAM)
Memory Type NV SRAM
Memory Size 2K x 8
Bus Type Parallel
VSUPPLY (V) (min) 4.75
VSUPPLY (V) (max) 5.25
Package/Pins MOD/24
Budgetary
Price (See Notes)
$8.58 @1k
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Simplified Block Diagram

DS1220AB, DS1220AD: Pin Assignment DS1220AB, DS1220AD: Pin Assignment Zoom icon

Design & Development

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Parameters

Parametric specs for Memory (EPROM, EEPROM, ROM, NV SRAM)
Memory Type NV SRAM
Memory Size 2K x 8
Bus Type Parallel
VSUPPLY (V) (min) 4.75
VSUPPLY (V) (max) 5.25
Package/Pins MOD/24
Budgetary
Price (See Notes)
$8.58 @1k

Key Features

  • 10 years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Directly replaces 2k x 8 volatile static RAM or EEPROM
  • Unlimited write cycles
  • Low-power CMOS
  • JEDEC standard 24-pin DIP package
  • Read and write access times of 100ns
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
  • Full ±10% VCC operating range (DS1220AD)
  • Optional ±5% VCC operating range (DS1220AB)
  • Optional industrial temperature range of -40°C to +85°C, designated IND

Applications/Uses

Description

The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Simplified Block Diagram

DS1220AB, DS1220AD: Pin Assignment DS1220AB, DS1220AD: Pin Assignment Zoom icon

Support & Training

Search our knowledge base for answers to your technical questions.

Filtered Search

Our dedicated team of Applications Engineers are also available to answer your technical questions. Visit our support portal