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3.6V, 1W RF Power Transistors for 900MHz Applications

Product Details

Key Features

Parametric specs for Power Amplifiers/Drivers
Frequency (MHz) (min) 0
Frequency (MHz) (max) 1000
POUT (dBm) 29
Efficiency (%) 58
Footprint (mm x mm) 4.9 x 6.0
Package/Pins SOIC (N)/8
Budgetary
Price (See Notes)
2.8
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Simplified Block Diagram

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Parameters

Parametric specs for Power Amplifiers/Drivers
Frequency (MHz) (min) 0
Frequency (MHz) (max) 1000
POUT (dBm) 29
Efficiency (%) 58
Footprint (mm x mm) 4.9 x 6.0
Package/Pins SOIC (N)/8
Budgetary
Price (See Notes)
2.8

Key Features

  • Low Voltage: Operates from 1 Li-Ion or 3 NiCd/NiMH Batteries
  • DC-to-Microwave Operating Range
  • 1W Output Power at 900MHz
  • On-Chip Diode for Accurate Biasing (MAX2602)
  • Low-Cost Silicon Bipolar Technology
  • Does Not Require Negative Bias or Supply Switch
  • High Efficiency: 58%

Applications/Uses

  • 915MHz ISM Transmitters
  • AMPS Cellular Phones
  • CDPD Modems
  • Digital Cellular Phones
  • Land Mobile Radios
  • Microcellular GSM (Power Class 5)
  • Narrow-Band PCS (NPCS)
  • Two-Way Paging

Description

The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply.

The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistor’s collector current as the temperature changes.

The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power amplifiers. Furthermore, a drain switch is not required to turn off the MAX2601/MAX2602. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device.

The MAX2601/MAX2602 are available in thermally enhanced, 8-pin SO packages, which are screened to the extended temperature range (-40°C to +85°C).

Simplified Block Diagram

MAX2601, MAX2602: Pin Configuration MAX2601, MAX2602: Pin Configuration Zoom icon

Technical Docs

Support & Training

Search our knowledge base for answers to your technical questions.

Filtered Search

Our dedicated team of Applications Engineers are also available to answer your technical questions. Visit our support portal .