Keywords: MESFETs, Gallium-Arsenide, GaAs MESFETs, current sense amps, current sensing, mesfet, metal semiconductor field effect transistors
Current through RG1 is set by a voltage (VPC) with respect to the negative supply (VEE), applied to the power-control input at pin 4. You can implement VPC with a voltage divider, a reference, or a variable voltage source. Because the gate voltage is negative with respect to the source, you must modify U1's supply voltage to ensure a negative gate drive for the MESFET: connect the VCC pin to ground and the GND pin to VEE. This uniform bias circuit can easily be modified for biasing BJTs and MOSFETs as well.
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