MAX77714

完备的系统PMIC,具有13个调节器、8路GPIO、RTC和灵活电源排序,适用于多核心应用

支持计算密集应用的总体电源管理IC (PMIC),适用于使用SoC应用处理器的移动平台


点击查看特定型号的库存状况。

概述

MAX77714为完备的电源管理IC (PMIC),适用于使用片上系统(SoC)应用处理器的便携式设备。

2个2A (SD2/3)、1个3A (SD1)和1个4A (SD0)降压型调节器,开关频率为2MHz,允许使用小磁性元件。SD0和SD1的输出电压可在0.26V至1.52V范围内设置,步长为10mV;SD2的输出电压可在0.6V至2.194V范围内设置,步长为6.5mV;SD3的输出电压可在0.6V至3.78V范围内设置,步长为12.5mV。

9个低压差(LDO)线性调节器电源为各种系统模块供电。每个LDO都具有关断模式可编程有源放电电路。所有LDO具有两种软启动速率,以限制启动期间的浪涌电流。

8个可编程GPIO可设置为通用输入(GPI)、通用输出(GPO)或交替模式,以实现附加功能。

实时时钟(RTC)带有外部晶振,提供计时和报警唤醒功能。对于不希望使用晶振的系统,提供内部硅振荡器。此外,集成看门狗定时器,用于系统监测。

集成开/关控制器,与灵活电源排序器(FPS)相结合,为设置上电/关断顺序提供最大灵活性,最大程度减少应用处理器的介入。

器件采用70焊球、4.1mm x 3.25mm x 0.7mm、0.4mm焊球间距晶圆级封装(WLP),是空间受限应用的理想选择。

工厂可编程选项允许根据众多应用对MAX77714进行量身定制。关于可编程选项的更多信息,请联系工厂;可能有最小订货量要求。

简易应用电路图
MAX77714: 简易应用电路图 Page-1 bold box.2888 med PCH Sheet.2893 med PCH Sheet.2895 Sheet.2896 Sheet.2897 Sheet.2898 Sheet.2899 Sheet.2900 Sheet.2901 Sheet.2902 med NCH Sheet.2904 Sheet.2905 Sheet.2906 Sheet.2907 Sheet.2908 Sheet.2909 Sheet.2910 Sheet.2911 Sheet.2912 Sheet.2913 Sheet.2914 Sheet.2915 Inductor Sheet.2917 Sm. Inductor Sheet.2919 Sheet.2920 Sheet.2921 Sheet.2922 Sheet.2923 Sheet.2924 Sheet.2925 C.2933 Sheet.2934 Sheet.2935 Sheet.2936 Sheet.2937 Sheet.2938 Sheet.2939 Sheet.2945 C.7 Sheet.2927 Sheet.2928 Sheet.2929 Sheet.2930 Sheet.2931 Sheet.2932 Sheet.2946 Sheet.2947 Sheet.2948 dirt gnd Sheet.2950 Sheet.2951 Sheet.2952 Sheet.2953 Sheet.2954 dirt gnd.3032 Sheet.3033 Sheet.3034 Sheet.3035 Sheet.3036 Sheet.3037 Sheet.3045 Sheet.3087 Sheet.3088 med PCH.3160 Sheet.3161 med PCH Sheet.3163 Sheet.3164 Sheet.3165 Sheet.3166 Sheet.3167 Sheet.3168 Sheet.3169 Sheet.3170 med NCH.3171 Sheet.3172 Sheet.3173 Sheet.3174 Sheet.3175 Sheet.3176 Sheet.3177 Sheet.3178 Sheet.3179 Sheet.3180 Sheet.3181 Sheet.3182 Sheet.3183 Inductor.3184 Sheet.3185 Sm. Inductor Sheet.3187 Sheet.3188 Sheet.3189 Sheet.3190 Sheet.3191 Sheet.3192 Sheet.3193 C.3194 Sheet.3195 Sheet.3196 Sheet.3197 Sheet.3198 Sheet.3199 Sheet.3200 Sheet.3201 C.3202 Sheet.3203 Sheet.3204 Sheet.3205 Sheet.3206 Sheet.3207 Sheet.3208 Sheet.3214 Sheet.3215 Sheet.3216 dirt gnd.3217 Sheet.3218 Sheet.3219 Sheet.3220 Sheet.3221 Sheet.3222 dirt gnd.3240 Sheet.3241 Sheet.3242 Sheet.3243 Sheet.3244 Sheet.3245 Sheet.3247 Sheet.3291 Sheet.3292 tag.3091 IN IN tag.3092 IN IN Sheet.3093 SD0 4A, DVS 0.26V to 1.52V (10mV steps) SD04A, DVS0.26V TO 1.52V (10mV STEPS) Sheet.3097 Sheet.3098 Sheet.3099 Sheet.3101 Sheet.3103 Sheet.3104 Sheet.3105 Sheet.3107 med PCH.3120 Sheet.3121 med PCH Sheet.3123 Sheet.3124 Sheet.3125 Sheet.3126 Sheet.3127 Sheet.3128 Sheet.3129 Sheet.3130 med NCH.3131 Sheet.3132 Sheet.3133 Sheet.3134 Sheet.3135 Sheet.3136 Sheet.3137 Sheet.3138 Sheet.3139 Sheet.3140 Sheet.3141 Sheet.3142 Sheet.3143 Inductor.3144 Sheet.3145 Sm. Inductor Sheet.3147 Sheet.3148 Sheet.3149 Sheet.3150 Sheet.3151 Sheet.3152 Sheet.3153 C.3154 Sheet.3155 Sheet.3156 Sheet.3223 Sheet.3224 Sheet.3225 Sheet.3226 Sheet.3227 C.3228 Sheet.3229 Sheet.3230 Sheet.3231 Sheet.3232 Sheet.3233 Sheet.3234 Sheet.3246 Sheet.3289 Sheet.3290 dirt gnd.3293 Sheet.3294 Sheet.3295 Sheet.3296 Sheet.3297 Sheet.3298 dirt gnd.3299 Sheet.3300 Sheet.3301 Sheet.3302 Sheet.3303 Sheet.3304 Sheet.3305 Sheet.3347 Sheet.3348 tag.3349 IN IN Sheet.3350 SD2 2A 0.6V to 2.194V (6.25mV steps) SD22A0.6V TO 2.194V (6.25mV STEPS) Sheet.3352 Sheet.3353 Sheet.3354 Sheet.3356 tag.3306 VSD2 VSD2 tag.3307 VSD1 VSD1 Sheet.3095 SD1 3A, DVS 0.26V to 1.52V (10mV steps) SD13A, DVS0.26V TO 1.52V (10mV STEPS) tag.3308 VSD0 VSD0 med PCH.3312 Sheet.3313 med PCH Sheet.3315 Sheet.3316 Sheet.3317 Sheet.3318 Sheet.3319 Sheet.3320 Sheet.3321 Sheet.3322 med NCH.3323 Sheet.3324 Sheet.3325 Sheet.3326 Sheet.3327 Sheet.3328 Sheet.3329 Sheet.3330 Sheet.3331 Sheet.3332 Sheet.3333 Sheet.3334 Sheet.3335 Inductor.3336 Sheet.3337 Sm. Inductor Sheet.3339 Sheet.3340 Sheet.3341 Sheet.3342 Sheet.3343 Sheet.3344 Sheet.3345 C.3346 Sheet.3351 Sheet.3357 Sheet.3358 Sheet.3359 Sheet.3360 Sheet.3361 Sheet.3362 C.3363 Sheet.3364 Sheet.3365 Sheet.3366 Sheet.3367 Sheet.3368 Sheet.3369 Sheet.3375 Sheet.3376 Sheet.3377 dirt gnd.3378 Sheet.3379 Sheet.3380 Sheet.3381 Sheet.3382 Sheet.3383 dirt gnd.3384 Sheet.3385 Sheet.3386 Sheet.3387 Sheet.3388 Sheet.3389 Sheet.3390 Sheet.3391 Sheet.3392 tag.3393 IN IN Sheet.3394 SD3 2A 0.6V to 3.78V (12.5mV steps) SD32A0.6V TO 3.78V (12.5mV STEPS) Sheet.3395 Sheet.3396 Sheet.3397 Sheet.3399 tag.3400 VSD3 VSD3 Sheet.3408 IN_LDO2 IN_LDO2 Sheet.3409 Sheet.3410 Sheet.3411 OUT_LDO2 OUT_LDO2 Sheet.3415 Sheet.3416 OUT_LDO0 OUT_LDO0 Sheet.3420 Sheet.3421 OUT_LDO1 OUT_LDO1 Sheet.3447 MBATT MBATT Sheet.3448 Sheet.3449 BIAS REF UVLO OVLO Thermal shutdown BIASREFUVLOOVLOTHERMAL SHUTDOWN Sheet.3450 GND GND Sheet.3451 Sheet.3469 Sheet.3470 Backup Battery Charger BACKUP BATTERY CHARGER Sheet.3471 Sheet.3472 Sheet.3473 Sheet.3474 BBATT BBATT Sheet.3475 tag Sheet.3477 Sheet.3478 Sheet.3479 Sheet.3480 Sheet.3481 Sheet.3482 RTC/Internal silicon oscillator RTC/INTERNAL SILICON OSCILLATOR Sheet.3483 Sheet.3497 Sheet.3498 Sheet.3484 XOUT XOUT Sheet.3485 XIN XIN Sheet.3486 32k_OUT 32k_OUT Sheet.3493 Sheet.3494 Sheet.3495 GPIO GPIO Sheet.3499 FPS_OUT0/GPIO0 FPS_OUT0/GPIO0 Sheet.3500 FPS_OUT1/GPIO1 FPS_OUT1/GPIO1 Sheet.3501 FPS_OUT2/GPIO2 FPS_OUT2/GPIO2 Sheet.3502 ACOK_IN/GPIO3 ACOK_IN/GPIO3 Sheet.3504 Sheet.3505 Sheet.3506 Sheet.3507 Sheet.3527 Bidirectional RESET Input/Output BIDIRECTIONAL RESET INPUT/OUTPUT Sheet.3528 nRST_IO nRST_IO Sheet.3529 Sheet.3530 I2C Interface and Interrupt Output I2C INTERFACE AND INTERRUPT OUTPUT Sheet.3531 Sheet.3532 Sheet.3533 SDA SDA Sheet.3534 SCL SCL Sheet.3535 Sheet.3536 nIRQ nIRQ Sheet.3537 Sheet.3538 INI2C INI2C Sheet.3539 ON/OFF Controller and Flexible Power Sequencer ON/OFF CONTROLLERANDFLEXIBLE POWER SEQUENCER Sheet.3540 Sheet.3541 EN0 EN0 Sheet.3542 EN1 EN1 Sheet.3543 Sheet.3582 Watchdog WATCHDOG clean gnd.3544 Sheet.3545 Sheet.3593 Sheet.3594 Sheet.3620 Sheet.3407 LDO2, 150mA, PMOS LDO2, 150mA, PMOS Sheet.3417 LDO1, 150mA, NMOS LDO1, 150mA, NMOS Sheet.3422 IN_LDO3_5 IN_LDO3_5 Sheet.3423 Sheet.3424 Sheet.3425 OUT_LDO3 OUT_LDO3 Sheet.3426 Sheet.3427 OUT_LDO5 OUT_LDO5 Sheet.3583 Sheet.3584 LDO3, 300mA, PMOS LDO3, 300mA, PMOS Sheet.3585 LDO5, 150mA, PMOS LDO5, 150mA, PMOS Sheet.3428 IN_LDO4_6 IN_LDO4_6 Sheet.3429 Sheet.3430 Sheet.3586 OUT_LDO4 OUT_LDO4 Sheet.3625 Sheet.3626 OUT_LDO6 OUT_LDO6 Sheet.3630 Sheet.3631 LDO4, 150mA, PMOS LDO4, 150mA, PMOS Sheet.3632 LDO6, 150mA, PMOS LDO6, 150mA, PMOS Sheet.3638 IN_LDO7_8 IN_LDO7_8 Sheet.3639 Sheet.3640 Sheet.3641 OUT_LDO7 OUT_LDO7 Sheet.3647 Sheet.3648 LDO7, 450mA, NMOS LDO7, 450mA, NMOS Sheet.3435 Sheet.3436 OUT_LDO8 OUT_LDO8 Sheet.3439 Sheet.3440 LDO8, 300mA, NMOS LDO8, 300mA, NMOS tag.3486 MBATT MBATT Sheet.3602 Sheet.3601 sm buf Sheet.3488 Sheet.3489 Sheet.3490 Sheet.3491 Sheet.3604 Sheet.3605 SHDN SHDN clean gnd.3722 Sheet.3723 Sheet.3724 Sheet.3725 clean gnd.3734 Sheet.3735 Sheet.3736 Sheet.3737 Sheet.3744 Sheet.3745 Sheet.3746 Sheet.3747 Sheet.3748 XGND XGND Sheet.3749 GND GND Sheet.3750 Sheet.3751 dirt gnd.3700 Sheet.3753 Sheet.3754 Sheet.3755 Sheet.3756 Sheet.3757 Sheet.3758 PGND PGND Sheet.3759 Sheet.3600 PGND PGND Sheet.3609 PGND PGND Sheet.3610 PGND PGND Sheet.3760 NC NC Sheet.3761 no connect Sheet.3763 Sheet.3764 Sheet.3765 Sheet.3652 IN_LDO0_1 IN_LDO0_1 Sheet.3653 Sheet.3786 Sheet.2889 INA_SD INA_SD Sheet.2890 LXA_SD LXA_SD Sheet.2891 PGA_SD PGA_SD Sheet.3106 IN_SD1 IN_SD1 Sheet.3157 LX_SD1 LX_SD1 Sheet.3158 PG_SD1 PG_SD1 Sheet.3288 FB_SD1 FB_SD1 Sheet.3117 IN_SD2 IN_SD2 Sheet.3118 LX_SD2 LX_SD2 Sheet.3119 PG_SD2_3 PG_SD2_3 Sheet.3355 FB_SD2 FB_SD2 Sheet.3309 IN_SD3 IN_SD3 Sheet.3310 LX_SD3 LX_SD3 Sheet.3311 PG_SD2_3 PG_SD2_3 Sheet.3398 FB_SD3 FB_SD3 Sheet.3651 Sheet.3670 Sheet.3671 Sheet.3672 Sheet.3790 clean gnd.3589 Sheet.3590 Sheet.3591 Sheet.3592 clean gnd.3413 Sheet.3414 Sheet.3418 Sheet.3419 Sheet.3431 Sheet.3432 XGND XGND clean gnd.3434 Sheet.3437 Sheet.3438 Sheet.3441 Sheet.3794 Sheet.3798 Sheet.3799 Sheet.3800 Sheet.3801 MAX77714 MAX77714 Sheet.3802 Sheet.3803 Sheet.3804 Sheet.3805 Sheet.3806 Sheet.3807 Sheet.3808 Sheet.3809 Sheet.3811 GPIO GPIO Sheet.3812 32K_OUT0/GPIO4 32K_OUT0/GPIO4 Sheet.3816 Sheet.3817 Sheet.3818 Sheet.3819 Sheet.3821 Sheet.3822 Sheet.3824 32K_OUT1/GPIO5 32K_OUT1/GPIO5 Sheet.3825 32K_OUT1/GPIO6 32K_OUT1/GPIO6 Sheet.3826 FPS_OUT3/GPIO7 FPS_OUT3/GPIO7 tag.3827 THERM THERM Sheet.3828 From µP Temp Sensor FROM µP TEMP SENSOR Connection Dot.253 Connection Dot.155 Sheet.3831 Connection Dot.3832 Connection Dot.155 Sheet.3834 Connection Dot.3835 Connection Dot.155 Sheet.3837 Connection Dot.3838 Connection Dot.155 Sheet.3840 tag.3841 IN IN Sheet.3842 Sheet.3860 Sheet.3861 AV_SD AV_SD C.3843 Sheet.3844 Sheet.3845 Sheet.3846 Sheet.3847 Sheet.3848 Sheet.3849 Sheet.1 MUX MUX Sheet.2 PGND PGND Sheet.3412 LDO0, 150mA, NMOS LDO0, 150mA, NMOS tag.3862 IN_GPIOB IN_GPIOB Sheet.3791 Sheet.3792 Connection Dot.3793 Connection Dot.155 Sheet.3796
优势和特征
  • 高度集成
    • 4个Buck调节器
      • SD0/1峰值效率高于90% at 3.6VIN,1.1VOUT
      • SD2/3峰值效率高于93% at 3.6VIN,1.8VOUT
      • 支持LDDR4x存储器要求
    • 9个低压差线性调节器
    • 8路GPIO
    • 实时时钟
    • 备用电池充电器
    • 双向复位I/O
    • 中断输出
    • 系统看门狗定时器
  • 高度灵活性和可配置
    • I2兼容接口
    • 提供工厂OTP选项
    • 灵活的电源排序器
    • 可配置上电/关断/休眠模式进入/退出定时
    • 高度可配置的GPIO ALT模式
      • 3种资源可配置作为32kHz振荡器输出
      • FPS上可配置4种资源
      • 1种资源可配置作为ACOK输入
  • 低功耗
    • 低IQ休眠模式下仅为85μA
    • SD0/1的低功耗静态电流仅为10μA
    • SD2/3的低功耗静态电流仅为5μA
    • LDO低功耗静态电流仅为1.5μA
  • 小尺寸
    • 70焊球、0.4mm焊球间距、10x7焊球阵列、WLP封装,4.1mm x 3.25mm x 0.7mm封装尺寸
    • 230mm2总方案尺寸


19-100241; Rev 0; 4/18

应用
  • 无人机
  • 智能手机/平板PC
  • 手持式游戏机
  • AR/VR耳麦
  • 流设备/机顶盒
  • 智能家居中心
  • 数码相机
  • 汽车后市场附件
Absolute Maximum Ratings
  • Top
    • EN0 to GND-0.3V to VMBATT + 0.3V
    • EN1 to GND-0.3V to VMBATT + 0.3V
    • SHDN to GND-0.3V to VMBATT + 0.3V
    • nRST_IO to GND-0.3V to VMBATT + 0.3V
    • nIRQ to GND-0.3V to VINI2C + 0.3V
    • XOUT to XGND (Note1)-0.3V to VRTC + 0.3V
    • XIN to XGND (Note 1)-0.3V to VRTC + 0.3V
    • BBATT to GND-0.3V to +6.0V
    • MBATT to GND-0.3V to +6.0V
    • nRST_IO Sink Current20mA
    • nIRQ Sink Current20mA
    • DGND to GND-0.3V to +0.3V
    • XGND to GND-0.3V to +0.3V
  • LDO
    • IN_LDO0_1 to GND-0.3V to +6.0V
    • OUT_LDO0 to GND-0.3V to VIN_LDO0-1 + 0.3V
    • IN_LDO2 to GND-0.3V to +6.0V
    • OUT_LDO1 to GND-0.3V to VIN_LDO0-1 + 0.3V
    • IN_LDO3_5 to GND-0.3V to +6.0V
    • OUT_LDO2 to GND-0.3V to VIN_LDO2 + 0.3V
    • IN_LDO4_6 to GND-0.3V to +6.0V
    • OUT_LDO3 to GND-0.3V to VIN_LDO3-5 + 0.3V
    • IN_LDO7_8 to GND-0.3V to +6.0V
    • OUT_LDO4 to GND-0.3V to VIN_LDO4-6 + 0.3V
    • OUT_LDO5 to GND-0.3V to VIN_LDO3-5 + 0.3V
    • OUT_LDO6 to GND-0.3V to VIN_LDO4-6 + 0.3V
    • OUT_LDO7 to GND-0.3V to VIN_LDO7-8 + 0.3V
    • OUT_LDO8 to GND-0.3V to VIN_LDO7-8 + 0.3V
  • Step-Down
    • IN_SD0 to PG_SD0-0.3V to +6.0V
    • IN_SD1 to PG_SD1-0.3V to +6.0V
    • IN_SD2 to PG_SD2-0.3V to +6.0V
    • LX_SD0 to PG_SD0 (Note 1)-0.3V to VIN_SD0 + 0.3V
    • LX_SD1 to PG_SD1 (Note 1)-0.3V to VIN_SD1 + 0.3V
    • LX_SD2 to PG_SD2 (Note 1)-0.3V to VIN_SD2 + 0.3V
    • LX_SDx RMS Current per Bump (TJ = +110°C) (RMS Current per Pin (T= +110°C))1.6A
    • FB_SD0/1 to GND-0.3V to VMBATT + 0.3V
    • PG_SDx to GND-0.3V to +0.3V
    • IN_SD3 to PG_SD3-0.3V to +6.0V
    • LX_SD3 to PG_SD3 (Note 1)-0.3V to VIN_SD3 + 0.3V
    • FB_SD2 to GND-0.3V to VIN_SD2 + 0.3V
    • FB_SD3 to GND-0.3V to VIN_SD3 + 0.3V
  • I2C
    • SDA, SCL to GND-0.3V to VINI2C + 0.3V
    • SDA Sink Current25mA
  • GPIO
    • GPIO_INB to GND-0.3V to +6.0V
    • GPIO4-7 to GND-0.3V to VGPIO_INB + 0.3V
    • GPIO0-3 to GND-0.3V to VMBATT + 0.3V
    • GPIOx Source Current12mA
    • GPIOx Sink Current20mA
  • Operating Temperature Range-40°C to +85°C
  • Junction Temperature+150°C
  • Storage Temperature Range-40°C to +150°C
  • Soldering Temperature (reflow)+260°C
Note 1: The specified voltage limitation is for steady state conditions.  Dead times of a few nano seconds exist as the dynamic step-down regulator transitions from inductor charging to inductor discharging and vice versa.  These dead times allow internal clamping diodes to PGNDx and INBx to forward bias (Vf~1V).  When the LXx waveform is observed on a high-bandwidth oscilloscope (≥ 100MHz), the LXx transition edges are commonly seen with 1.5V spikes.  These spikes are due to (1) the internal clamping diode forward voltage and (2) the high rate of current change through the current loop's inductance (V = L x di/dt).  Designs must follow the recommended printed circuit board (PCB) layout in order to minimize this current loop's inductance.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Package Information
WLP
Package Code W703A4+1
Outline Number 21-100187
Land Pattern Number Refer to Application Note 1891
Thermal Resistance, Four-Layer Board:
Junction to Ambient (θJA) 37.43˚C/W
Junction to Case (θJC) NA

For the latest package outline information and land patterns (footprints), go to www.maximintegrated.com/packages. Note that a “+”, “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status.

Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—Global Resources
(Limits are 100% tested at TA = +25°C. Limits over the operating temperature range (TA = -40°C to +85°C) and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
Electrical Characteristics—Global Resources (continued)
(Limits are 100% tested at TA = +25°C. Limits over the operating temperature range (TA = -40°C to +85°C) and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
MAIN BATTERY POWER INPUT (MBATT)
MBATT Operating Voltage Range VMBATT 2.6 5.5 V
MBATT Undervoltage-Lockout Threshold VMBATTUVLO VMBATT falling, 200mV hystersis 2.5 V
MBATT Overvoltage Lockout Threshold VMBATTOVLO VMBATT rising, 200mV hysteresis 5.70 5.85 6.00 V
Quiescent Supply Current IQ_MBATT All regulators off, 32kHz oscillator in low-power mode (PWR_MD_32k = 0b1), VMBATT = 3.6V, IBBATT = 0µA 0.8 12 25 μA
IQ_MBATT All regulators off, 32kHz oscillator in low-power mode (PWR_MD_32k = 0b1),  internal reference and bias circuitry active (L_B_EN = 1), VMBATT = 3.6V, IBBATT = 0µA 42
No-Load LDO Supply Current Current into MBATT and all LDO power inputs, VMBATT = 3.6V. All LDO power inputs are 3.6V, IBBATT = 0µA, LDOs set to minimum output voltage, all step-down regulators disabled, 32kHz clock buffer disabled, 32kHz oscillator in low-power mode (PWR_MD_32k = 0b1), VIN_GPIOB = 0V.  This does not include any current into nRST_IO or nIRQ Normal-power mode, all LDOs enabled 265 μA
Low-power mode, LDO2-LDO6 enabled (PMOS) 58
No-Load Step-Down Supply Current Current into MBATT and all step-down power inputs, VMBATT = 3.6V, all regulator inputs are 3.6V, IBBATT = 0µA, all step-downs enabled with their minimum output voltages, all LDOs disabled, 32kHz clock buffer disabled, 32kHz oscillator in low-power mode (PWR_MD_32k = 0b01), VIN_GPIOB = 0V.  This does not include any current into nRST_IO or nIRQ Normal-power mode, all step-down regulators enabled 145 μA
Low-power mode, all step-down regulators enabled 82.5
No-Load LDO and Step-Down Supply Current Current into MBATT all step-down power inputs, and all LDO power inputs, VMBATT = 3.6V, all regulator inputs are 3.6V,  IBBATT = 0µA, all regulators set to minimum output voltage. 32kHz clock buffer disabled, 32kHz oscillator in low-power mode (PWR_MD_32k = 0b01), VIN_GPIOB = 0V.   This does not include any current into nRST_IO or nIRQ Normal-power mode, all regulators enabled 375 520 μA
Current into MBATT all step-down power inputs, and all LDO power inputs, VMBATT = 3.6V, all regulator inputs are 3.6V,  IBBATT = 0µA, all regulators set to minimum output voltage. 32kHz clock buffer disabled, 32kHz oscillator in low-power mode (PWR_MD_32k = 0b01), VIN_GPIOB = 0V.   This does not include any current into nRST_IO or nIRQ Low-power mode, all regulators except LDO0/1/7/8 (NMOS) 110 165
MBATT RESET COMPARATOR
Reset Falling Threshold Range VMBATT_RESET MBATT_RESET[2:0] = 0b000 2.7 V
MBATT_RESET[2:0] = 0b001 2.8
MBATT_RESET[2:0] = 0b010 2.9
MBATT_RESET[2:0] = 0b011 2.95 3.0 3.05
MBATT_RESET[2:0] = 0b100 3.1
MBATT_RESET[2:0] = 0b101 3.2
MBATT_RESET[2:0] = 0b110 3.3
MBATT_RESET[2:0] = 0b111 3.4
Reset Threshold Hysteresis VMBATT_RESET_HYS MBATT_HYS[1:0] = b00 0.1 V
MBATT_HYS[1:0] = 0b01 0.2
MBATT_HYS[1:0] = 0b10 0.3
MBATT_HYS[1:0] = 0b11 0.4
BIDIRECTIONAL RESET INPUT/OUTPUT (nRST_IO)
Reset Output Deassert Delay Time tRST_O OTP_TRSTO[1:0] = 0b00 0.8 1.0 1.2 ms
OTP_TRSTO[1:0] = 0b01 8
OTP_TRSTO[1:0] = 0b10 32
OTP_TRSTO[1:0] = 0b11 64
Reset Input Debounce Timer tDBNC_nRST_IO 24 30 36 ms
Input High Voltage VIH RSO = 0 1.4 V
Input Low Voltage VIL RSO = 0 0.4 V
Input Hysteresis VHYS RSO = 0 50 mV
Input Leakage Current VMBATT = 5.5V, VnRST_IO = 0V and 5.5V, RSO = 0, TA = +25°C 0.001 1 µA
VMBATT = 5.5V, VnRST_IO = 0V and 5.5V, RSO = 0, TA = +85°C 0.01
Output Voltage Low VOL ISINK = 4mA, RSO = 1 0.4 V
Output High Leakage Current VMBATT = 5.5V, VnRST_IO = 0V and 5.5V, RSO = 0, TA = +25°C 0.001 1 µA
VMBATT = 5.5V, VnRST_IO = 0V and 5.5V, RSO = 0, TA = +85°C 0.01
DEDICATED ACTIVE-LOW OPEN-DRAIN OUTPUTS (nIRQ)
Output Voltage Low VOL ISINK = 4mA, RSO = 1 0.4 V
Output High Leakage Current IOZH VMBATT = 5.5V, VnIRQ = 0V and 5.5V, RSO = 0, TA = +25°C 0.001 1 µA
VMBATT = 5.5V, VnIRQ = 0V and 5.5V, RSO = 0, TA = +85°C 0.01
THERMAL ALARM & SHUTDOWN
Thermal Alarm 1 TJ110 TJ rising, +5°C hysteresis 110 °C
Thermal Alarm 2 TJ130 TJ rising, +5°C hysteresis 130 °C
Thermal Shutdown Temperature TJSHDN TJ rising, +10°C hysteresis 145 °C
BACKUP-BATTERY POWER INPUT
BBATT Current IBBATT VMBATT = 0V, PWR_MD_32k = 0b0  VBBATT = 3.00V 4.2 8 μA
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—ON/OFF Controller
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
Electrical Characteristics—ON/OFF Controller (continued)
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
ON/OFF CONTROLLER
Input Voltage High VIH 1.4 V
Input Voltage Low VIL 0.4 V
Input Hysteresis VHYS 0.05 V
Manual Reset Time tHRDRST MRT[2:0] = 0b000 2 s
MRT[2:0] = 0b001 3
MRT[2:0] = 0b010 4
MRT[2:0] = 0b011 5
MRT[2:0] = 0b100 6
MRT[2:0] = 0b101 8
MRT[2:0] = 0b110 10
MRT[2:0] = 0b111 12
Manual Reset Warning Time (MRWRN) tMRWRN MRT[2:0] = 0b000 2 s
MRT[2:0] = 0b001 2
MRT[2:0] = 0b010 3
MRT[2:0] = 0b011 4
MRT[2:0] = 0b100 5
MRT[2:0] = 0b101 6
MRT[2:0] = 0b110 8
MRT[2:0] = 0b111 10
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—Flexible Power Supply (FPS)
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
Electrical Characteristics—Flexible Power Supply (FPS) (continued)
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
FLEXIBLE POWER SEQUENCE
Flexible Power Sequencer Enable Delay tFSDON MAX77714 reference is already powered up prior to the enable command 91.5 μs
Flexible Power Sequencer Disable Delay tFPSDOFF 152 μs
Flexible Power Sequencer Event Period tFST MSTR_PU[2:0], MSTR_PD[2:0] = 0b000 31 μs
MSTR_PU[2:0], MSTR_PD[2:0] = 0b001 63
MSTR_PU[2:0], MSTR_PD[2:0] = 0b010 127
MSTR_PU[2:0], MSTR_PD[2:0] = 0b011 256
MSTR_PU[2:0], MSTR_PD[2:0] = 0b100 508
MSTR_PU[2:0], MSTR_PD[2:0] = 0b101 984
MSTR_PU[2:0], MSTR_PD[2:0] = 0b110 1936
MSTR_PU[2:0], MSTR_PD[2:0] = 0b111 3904
Flexible Power Sequencer Event Period Timer Accuracy Accuracy of the flexible power sequencer clock -15 +15 %
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—Step-Down Regulators (SD0–4A Output)
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
Electrical Characteristics—Step-Down Regulators (SD0–4A Output) (continued)
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
SUPPLY VOLTAGE AND CURRENT
Input Voltage Range VINSD0 2.6 5.5 V
OUTPUT VOLTAGE
Output Voltage Range VOUT_SD0 I2C programmable in 10mV steps (SD0VOUT[6:0] = 0x01 to 0x7F) 0.26 1.52 V
Output Voltage Accuracy VOUT_ACC_NM_SD0 FPWM mode, normal-power mode, no load, TA = +25°C, VOUT_SD0 = 1.0V -2 +2 %
VOUT_ACC_LPM_SD0 Low-power mode, no load, TA = +25°C, VOUT_SD0 = 1.000V -4 +4
PERFORMANCE
Switching Frequency fSW VSYS = 3.6V 1.8 2 2.2 MHz
Line Regulation VINSD0 = 2.6V to 5.5V, VOUT_SD0 = 1.0V 0.2 %/V
Soft-Start Slew Rate SD0_SSRAMP = 0 2.5 mV/µs
SD0_SSRAMP = 1 10
Output Voltage Ramp-Up/Down Slew Rate (DVS) 10 mV/µs
PMOS ON Resistance RON_PCH VSYS = VIN_SD0 = 5V, IOUT = 150mA 38 60 mΩ
VSYS = VIN_SD0 = 3.6V, IOUT = 150mA 48 60
NMOS ON Resistance RON_NCH VSYS = VIN_SD0 = 5V, IOUT = 150mA 18 40 mΩ
VSYS = VIN_SD0 = 3.6V, IOUT = 150mA 24 40
NMOS Zero-Crossing Threshold IZX_SKIP SKIP mode 20 mA
IZX_PWM Low-power mode 20
LX Leakage IL_LX_25C VLXSD0 = 5.5V or 0V, TA = +25°C 0.1 1 µA
IL_LX_85C VLXSD0 = 5.5V or 0V, TA = +85°C (Note 2) 1
Output Active Discharge Resistance RDISCHG_SD0 Resistance from FBB0 to PGND0, output disabled 100
Turn-On Delay Time tON_DLY_SD0 EN signal to LX switching with bias on 200 µs
OUTPUT CURRENT
Maximum Output Current IOUT_MAX_NM_SD0 RMS, normal mode 4000 mA
PMOS Peak Current Limit ILIMP TA= +25°C 4825 5250 5675 mA
T= -40°C to +85°C 4825 5250 5675
NMOS Valley Current Limit ILIMV 3000 mA
NMOS (Negative) Current Limit ILIMN 2000 mA
BROWNOUT COMPARATOR
Output-Brownout Threshold VBO_SD0 Normal-power mode, falling threshold, SD0_BO_THR[1:0] = 0b00
77 %
Normal-power mode, falling threshold, SD0_BO_THR[1:0] = 0b01
81
Normal-power mode, falling threshold, SD0_BO_THR[1:0] = 0b10
85.7
Normal-power mode, falling threshold, SD0_BO_THR[1:0] = 0b11
91
Output-Brownout Accuracy Normal-Power Mode. VOUT_SD0 = 1.0V (SD0_VOUT[6:0])  -4.5 +4.5 %
Output-Brownout Threshold (Low-Power Mode) VBO_SD0 Falling threshold, low-power mode
86.0 %
Output-Brownout Accuracy Low-power mode. VOUT_SD0 = 1.0V (SD0_VOUT[6:0]) -4 +4 %
Output-Brownout Hysteresis Range VBO_HYS_SD0 2-Bit control over I2C. Max rising threshold limited to 96% 5 20 %
Brownout-Voltage Hysteresis Programming Step Size Programmable with SD0_BO_HYS[1:0] 5 %
Output-Brownout Hysteresis (Low-Power Mode) VBO_HYS_SD0_LPM
5 %
OV COMPARATOR
Output OV Trip Level VOUT_SD0_OV Rising edge, SD0_OV_THR = 1 117.1 %
Output OV Hysteresis SD0_OV_THR = 1 8.6 %
Output OV Trip Level VOUT_SD0_OV Rising edge, SD0_OV_THR = 0 108.5 %
Output OV Hysteresis SD0_OV_THR = 0 3.9 %
Output OV Trip Level (Low-Power Mode) VOUT_SD0_OV Rising edge, low-power mode 108.3 %
Output OV Hysteresis (Low-Power Mode) Low-power mode 3.9 %
Note 2:  Design guidance only and is not production tested.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—Step-Down Regulators (SD1–3A Output)
(VSYS =  3.6V, TA =  -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
Electrical Characteristics—Step-Down Regulators (SD1–3A Output) (continued)
(VSYS =  3.6V, TA =  -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
SUPPLY VOLTAGE AND CURRENT
Input Voltage Range VIN_SD1 2.6 5.5 V
OUTPUT VOLTAGE
Output Voltage Range VOUT_SD1  I2C programmable in 10mV steps (SD1VOUT[6:0] = 0x01 to 0x7F) 0.26 1.52 V
Output Voltage Accuracy VOUT_ACC_NM_SD1 FPWM mode, normal mode, no load, TA = +25°C, VOUT_SD1 = 1.0V -2 +2 %
VOUT_ACC_LPM_SD1 Low-power mode, no load, TA = +25°C, VOUT_SD1 = 1.000V -4 +4
PERFORMANCE
Switching Frequency fSW VMBATT = 3.6V 1.8 2 2.2 MHz
Line Regulation VINSD1 = 2.6V to 5.5V, VOUT_SD1 = 1.0V 0.2 %/V
PMOS ON Resistance RON_PCH VMBATT = VINSD1 = 5V, IOUT = 150mA 45 90 mΩ
VMBATT = VINSD1 = 3.6V, IOUT = 150mA 58 90
NMOS ON Resistance RON_NCH VMBATT = VINSD1 = 5V, IOUT = 150mA 28 60 mΩ
VMBATT = VINSD1 = 3.6V, IOUT = 150mA 35 60
NMOS Zero-Crossing Threshold IZX_SKIP Skip mode 20 mA
IZX_PWM Low-power mode 20
LX Leakage IL_LX_25C VLXSD1 = 5.5V or 0V, TA = +25°C 0.1 1 µA
IL_LX_85C VLXSD1 = 5.5V or 0V, TA = +85°C (Note 3) 1
Output Active Discharge Resistance RDISCHG_SD1 Resistance from FB_SD1 to PG_SD1, output disabled 100
Turn-On Delay Time tON_DLY_SD1 EN signal to LX switching with bias on 200 µs
BROWNOUT COMPARATOR
Output-Brownout Threshold VBO_SD1 Normal-power mode, falling threshold, SD1_BO_THR[1:0] = 0b00
77 %
Normal-power mode, falling threshold, SD1_BO_THR[1:0] = 0b01
81
Normal-power mode, falling threshold, SD1_BO_THR[1:0] = 0b10
85.7
Normal-power mode, falling threshold, SD1_BO_THR[1:0] = 0b11
91
Output-Brownout Accuracy Normal-power mode. VOUT_SD1 = 1.0V (SD1_VOUT[6:0])  -4.5 +4.5 %
Output-Brownout Threshold (Low Power Mode) VBO_SD1 Falling threshold, low-power mode
86.0 %
Output-Brownout Accuracy Low-power mode, VOUT_SD1 = 1.0V (SD1_VOUT[6:0]) -4 +4 %
Output-Brownout Hysteresis Range VBO_HYS_SD1 2-Bit control over I2C. Max rising threshold limited to 96% 5 20 %
Brownout-Voltage Hysteresis Programming Step Size Programmable with SD1_BO_HYS[1:0] 5 %
Output-Brownout Hysteresis (Low-Power Mode) VBO_HYS_SDx_LPM
5 %
OUTPUT CURRENT
Maximum Output Current IOUT_MAX_NM_SD1 RMS, normal mode 3000 mA
PMOS Peak Current Limit ILIMP T= +25°C 3825 4250 5100 mA
T= -40°C to +85°C 3825 4250 5200
NMOS Valley Current Limit ILIMV 3000 mA
NMOS (Negative) Current Limit ILIMN 2000 mA
OV COMPARATOR
Output OV Trip Level VOUTSD1_OV Rising edge, SD1_OV_THR = 1 117.1 %
Output OV Hysteresis SD1_OV_THR = 1 8.6 %
Output OV Trip Level VOUTSD1_OV Rising edge, SD1_OV_THR = 0 108.5 %
Output OV Hysteresis SD1_OV_THR = 0 3.9 %
Output OV Trip Level (Low-Power Mode) VOUTSD1_OV Rising edge, low-power mode 108.3 %
Output OV hysteresis (Low-Power Mode) Low-power mode 3.9 %
Note 3:  Design guidance only and is not production tested.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—Step-Down Regulators (SD2/3–2A Output)
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
Electrical Characteristics—Step-Down Regulators (SD2/3–2A Output) (continued)
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
SUPPLY VOLTAGE AND CURRENT
Input Voltage Range VIN_SDx 2.6 5.5 V
OUTPUT VOLTAGE
Output Voltage Range VOUT_SD2 Programmable in 6.25mV steps with SD2VOUT[7:0] 0.600 2.194 V
VOUT_SD3 Programmable in 12.5mV steps with SD3VOUT[7:0]  0.600 3.78
Output Voltage Accuracy VOUT_ACC_NM_SD2 FPWM mode, normal-power mode, no load, VOUT_SD2 = 1.1V -2 +2 %
VOUT_ACC_LPM_SD2 Low-power mode, no load, VOUT_SD2 = 1.1V -4 +4
VOUT_ACC_NM_SD3 FPWM mode, normal mode, no load, VOUT_SD3 = 1.1V -2 +2
VOUT_ACC_LPM_SD3 Low-power mode, no Load, VOUT_SD3 = 1.1V -4 +4
OUTPUT CURRENT
Maximum Output Current IOUT_MAX_NM_SD2_3 RMS, normal mode, L = 1μH 2000 mA
PMOS Peak Current Limit ILIMP VMBATT = 3.6V 2300 2875 4200 mA
VMBATT = 5V 2300 2875 4200
NMOS Valley Current Limit ILIMV VSYS = 3.6V 2125 mA
VSYS = 5V 2125
NMOS Negative Current Limit ILIMN VSYS = 3.6V 800 mA
VSYS = 5V 800
PERFORMANCE
Line Regulation VMBATT = VIN_SD2_3 = 2.6V to 5.5V 0.2 %/V
Switching Frequency fSW VMBATT = 3.3V 1.8 2 2.2 MHz
VMBATT = 5V 1.8 2 2.2
Soft-Start Slew Rate Fixed for SD2 6.5 mV/µs
Fixed for SD3 17
Output Voltage Ramp-Up Slew Rate Fixed for SD2, 3 (Notes 4, 7, 8 ), COUT = 22μF 40 mV/µs
Output Voltage Ramp-Down Slew Rate Fixed for SD2, 3 (Notes 4, 7), COUT = 22μF, SDxFPWMEN = 1 (x = 1, 2), no load 18 mV/µs
PMOS ON Resistance RON_PCH VSYS = VIN_SDx = 3.6V, IOUT = 150mA 100 150 mΩ
VSYS = VIN_SDx = 5V, IOUT = 150mA, 100 150
NMOS ON Resistance RON_NCH VSYS = VIN_SDx = 3.6V, IOUT = 150mA 60 100 mΩ
VSYS = VIN_SDx = 5V, IOUT = 150mA 60 100
NMOS Zero-Crossing Threshold IZX SKIP mode 20 mA
LX Leakage IL_LX_25C VLX2_3 = 5.5V or 0V, TA = +25°C 0.1 1 µA
IL_LX_85C VLX2_3 = 5.5V or 0V, TA = +85°C (Note 4) 1
Output Active Discharge Resistance RDISCHG_SDx Resistance from FBBx to PGNDx, output disabled, (Note 6) 100
Turn-On Delay Time tON_DLY_SDx EN Signal to LX Switching with Bias ON 30 µs
BROWNOUT COMPARATOR
Output-Brownout Threshold VBO_SDx Normal-power mode, falling threshold, SDx_BO_THR[1:0] = 0b00
75 %
Normal-power mode, falling threshold, SDx_BO_THR[1:0] = 0b01
80
Normal-power mode, falling threshold, SDx_BO_THR[1:0] = 0b10
85
Normal-power mode, falling threshold, SDx_BO_THR[1:0] = 0b11
90
Output-Brownout Accuracy Normal-power mode. VOUT_SDx = 1.0V (SDxVOUT[7:0]) -4 +4 %
Output-Brownout Threshold (Low-Power Mode) VBO_SDx Falling threshold, low-power mode
86.0 %
Output-Brownout Accuracy Low-power mode. VOUT_SDx = 1.0V (SDxVOUT[7:0]) -4 +4 %
Output-Brownout Hysteresis Range VBO_HYS_SDx 2-Bit control over I2C. Max rising threshold limited to 96% 5 20 %
Brownout-Voltage Hysteresis Programming Step Size Programmable with SDx_BO_HYS[1:0] 5 %
Output-Brownout Hysteresis (Low-Power Mode) VBO_HYS_SDx_LPM
5 %
OV COMPARATOR
Output OV Trip Level VOUTSDx_OV Rising edge, SDx_OV_THR = 1,
referenced to output voltage setting 
116.6 %
Output OV Hysteresis SDx_OV_THR = 1 9.1 %
Output OV Trip Level VOUTSDx_OV Rising edge, SDx_OV_THR = 0
referenced to output voltage setting 
108.3 %
Output OV Hysteresis SDx_OV_THR = 0 2.8 %
Output OV Trip Level (Low-Power Mode) VOUTSDx_OV Rising edge, low-power mode 108.3 %
Output OV Hysteresis (Low-Power Mode) Low-power mode 2.8 %
Note 4:  Design guidance only and is not production tested.
Note 5:  Individual step-down supply current is not production tested. It is covered by a combined test by turning on all step-down regulators.
Note 6:  There is an n-channel MOSFET in series with the output active discharge resistance.  This NMOS requires VSYS > 1.2V to be enhanced.
Note 7:  The ramp-down slew rate when the output voltage is decreased via I2C is a function of the negative current limit and the output capacitance. With no load, forced PWM mode, and 22μF output capacitor, the ramp-down slew rate is dv/dt = i / C  = 0.4A / 22μF = 18mV/μs.
Note 8:  DVS and soft-start ramp rates can be expected to vary by up to 30%.
Note 9:  The input and output voltage range of SD2/3 ensure that the 90% duty cycle limitation can never practically be reached. Additionally, SD2/3 is capable of 100% duty cycle for output voltages above 1.9V. 
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—150mA PMOS LDO (LDO2, LDO4, LDO5, LDO6)
(VSYS = 3.7V, VIN_LDO = 3.7V, CIN_LDO = 1μF, COUT_LDO = 2.2μF. Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range (TA=-40°C to +85°C) are guaranteed by design and characterization, unless otherwise noted.)
Electrical Characteristics—150mA PMOS LDO (LDO2, LDO4, LDO5, LDO6) (continued)
(VSYS = 3.7V, VIN_LDO = 3.7V, CIN_LDO = 1μF, COUT_LDO = 2.2μF. Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range (TA=-40°C to +85°C) are guaranteed by design and characterization, unless otherwise noted.)
GENERAL CHARACTERISTICS
Input Voltage Range VIN_LDOx Guaranteed by output accuracy 1.7 5.5 V
Undervoltage Lockout VUVLOxx Rising, 100mV hysteresis 1.6 1.7 V
Output Voltage Range VOUTxx VINxx is the maximum of 3.7 or VOUT+0.3V 50mV/step (6-bit), LDO2, LDO5, LDO6 0.8 3.95 V
50mV step from 0.4V to 0.5V and 12.5mV step (7-bit), LDO4 from 0.5 to 1.275V 0.4 1.275
Maximum Output Current IMAXxx Guaranteed by Output Accuracy Normal mode 150 mA
Low-Power mode 5
CORE PERFORMANCE SPECIFICATIONS
Output Voltage Accuracy Normal mode VIN = VNOM+0.3V to 5.5V with 1.7V minimum, IOUT = 0.1mA to IMAX, VNOM set to any voltage -3 +3 %
LDO4 Normal mode VIN = VNOM+0.3V to 5.5V with 1.7V minimum, IOUT = 0.1mA to IMAX, VNOM set to any voltage -4.5 +4.5
Low-power mode VIN = VNOM+0.3V to 5.5V with 1.7V minimum, IOUT = 0.1mA to 5mA, VNOM set to any voltage -5 +5
Load Regulation (Note 15) Normal mode IOUT = 0.1mA to IMAX, VIN = VNOM+0.3V with 1.7V minimum VNOM set to any voltage 0.05 %
Low-power mode IOUT = 0.1mA to 5mA, VIN = VNOM+0.3V with 1.7V minimum, VNOM set to any voltage 0.05
Line Regulation (Note 15) Normal mode VIN = VNOM+0.3V to 5.5V with 1.7V minimum, IOUT = 0.1mA, VNOM set to any voltage 0.01 %/V
Line Regulation (Note15) Low-power mode VIN = VNOM+0.3 to 5.5V with 1.7V minimum. IOUT = 0.1mA, VNOM set to any voltage 0.01 %/V
Dropout Voltage VDOxx Normal mode, IOUT = IMAX, LDO4 not tested VIN = 3.7V 50 100 mV
VIN = 1.7V 150 300
Low-power mode, IOUT = 5mA, VIN = 3.7V 150 300
Output Current Limit ILIMxx VOUT = 0V, % of IMAX 110 180 250 %
DYNAMIC CHARACTERISTICS
Soft-Start and Dynamic Voltage Change Ramp Rate tSSxx After enabling, SS_Lx = 1 (Note 10) 5 mV/μs
After enabling, SS_Lx = 0 (Note 10) 100
Active Discharge Resistance Output disabled, VOUT = 1V, resistance from OUT_LDOx to GND, active discharge enabled (Lxx_ADE = 1) 65 Ω
THERMAL SHUTDOWN
Thermal Shutdown Output disabled or enabled TJ rising 165 °C
TJ falling 150
POWER-OK COMPARATOR
Power-OK Threshold VPOKTHL VOUT when VPOK switches VOUT falling 84 87 %
VOUT rising 92 96
Note 10:  Limits are 100% production tested at TA = +25°C.  Limits over the operating temperature range are guaranteed through correlation using statistical quality control methods.
Note 11:  Does not include ESR of the capacitance or trace resistance of the PCB.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—300mA PMOS LDO (LDO3)
(VSYS = 3.7V, VIN_LDO = 3.7V, CIN_LDO = 1μF, COUT_LDO = 2.2μF. Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range (T= -40°C to +85°C) are guaranteed by design and characterization, unless otherwise noted.)
Electrical Characteristics—300mA PMOS LDO (LDO3) (continued)
(VSYS = 3.7V, VIN_LDO = 3.7V, CIN_LDO = 1μF, COUT_LDO = 2.2μF. Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range (T= -40°C to +85°C) are guaranteed by design and characterization, unless otherwise noted.)
GENERAL CHARACTERISTICS
Input Voltage Range VIN_LDOx Guaranteed by output accuracy 1.7 5.5 V
Undervoltage Lockout VUVLOxx Rising, 100mV hysteresis 1.6 1.7 V
Output Voltage Range VOUTxx VINxx is the maximum of 3.7 or VOUT+0.3V 50mV/Step (6-bit), LDO3 0.8 3.95 V
Maximum Output Current IMAXxx Guaranteed by output accuracy Normal mode 300 mA
Low-power mode 5
CORE PERFORMANCE SPECIFICATIONS
Output Voltage Accuracy Normal mode VIN = VNOM+0.3V to 5.5V with 1.7V minimum, IOUT = 0.1mA to IMAX, VNOM set to any voltage -3 +3 %
Low-power mode VIN = VNOM+0.3V to 5.5V with 1.7V minimum, IOUT = 0.1mA to 5mA, VNOM set to any voltage -5 +5
Load Regulation (Note 15) Normal mode IOUT = 0.1mA to IMAX, VIN = VNOM+0.3V with 1.7V minimum VNOM set to any voltage 0.05 %
Low-power mode IOUT = 0.1mA to 5mA, VIN = VNOM+0.3V with 1.7V minimum, VNOM set to any voltage 0.05
Line Regulation (Note 15) Normal mode VIN = VNOM+0.3V to 5.5V with 1.7V minimum, IOUT = 0.1mA, VNOM set to any voltage 0.01 %/V
Line Regulation (Note15) Low-power mode VIN = VNOM+0.3 to 5.5V with 1.7V minimum. IOUT = 0.1mA, VNOM set to any voltage 0.01 %/V
Dropout Voltage VDOxx Normal mode, IOUT = IMAX VIN = 3.7V 50 100 mV
VIN = 1.7V 150 450
Low-power mode, IOUT = 5mA, VIN = 3.7V 150 300
Output Current Limit ILIMxx VOUT = 0V, % of IMAX 110 180 250 %
DYNAMIC CHARACTERISTICS
Soft-Start and Dynamic-Voltage-Change Ramp Rate tSSxx After enabling (Note 12) SS_Lx = 1 5 mV/μs
After enabling, (Note 12) SS_Lx = 0 100
Active Discharge Resistance Output disabled, VOUT = 1V, resistance from OUT_LDOx to GND, active discharge enabled (ADE_LX = 1) 65 Ω
THERMAL SHUTDOWN
Thermal Shutdown Output disabled or enabled TJ rising 165 °C
Tfalling 150
POWER-OK COMPARATOR
Power-OK Threshold VPOKTHL VOUT when VPOK switches VOUT falling 84 87 %
VOUT rising 92 96
Note 12:  Limits are 100% production tested at TA = +25°C.  Limits over the operating temperature range are guaranteed through correlation using statistical quality control methods.
Note 13:  Does not include ESR of the capacitance or trace resistance of the PCB.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—150mA NMOS LDO (LDO0, LDO1)
(VSYS = 3.7V, VIN_LDO = 3.7V, CIN_LDO = 1μF, COUT_LDO = 2.2μF. Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range (T= -40°C to +85°C) are guaranteed by design and characterization, unless otherwise noted.)
Electrical Characteristics—150mA NMOS LDO (LDO0, LDO1) (continued)
(VSYS = 3.7V, VIN_LDO = 3.7V, CIN_LDO = 1μF, COUT_LDO = 2.2μF. Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range (T= -40°C to +85°C) are guaranteed by design and characterization, unless otherwise noted.)
GENERAL CHARACTERISTICS
Input Voltage Range VIN_LDOx Guaranteed by output accuracy VOUT 5.5 V
Output Voltage Range VOUTxx VINxx is the maximum of 3.7 or VOUT+0.3V 25mV/step (6-bit), LDO0, LDO1 0.8 2.375 V
Maximum Output Current IMAXxx Guaranteed by output accuracy Normal mode 150 mA
Low-power mode 5
CORE PERFORMANCE SPECIFICATIONS
Output Voltage Accuracy Normal mode VIN = VNOM+0.3V to 5.5V, IOUT = 0.1mA to IMAX, VNOM set to any voltage, VMBATT = VNOM+1.5V with 2.45V minimum -3 +3 %
Low-power mode VIN = VNOM+0.3V to 5.5V, IOUT = 0.1mA to 5mA, VNOM set to any voltage, VMBATT = VNOM+1.5V with 2.45V minimum -5 +5
Load Regulation (Note 15) Normal mode IOUT = 0.1mA to IMAX, VIN = VNOM+0.3V,  VMBATT = VNOM+1.5V with 2.45V minimum  0.05 %
Low-power mode IOUT = 0.1mA to 5mA, VIN = VNOM+0.3V, VMBATT = VNOM+1.5V with 2.45V minimum 0.05
Line Regulation (Note 15) Normal mode VIN = VNOM+0.3V to 5.5V, IOUT = 0.1mA 0.01 %/V
Line Regulation (Note15) Low-power mode VMBATT = VNOM+0.3V to 5.5V with 2.45V minimum, VIN = VNOM+0.3V to 5.5V, IOUT = 0.1mA 0.01 %/V
Dropout Voltage VDOxx Normal mode, IOUT = IMAX VMBATT-VOUT = 2.5V 50 100 mV
VMBATT-VOUT = 1.7V 150 300
Low Power Mode, IOUT = 5mA, VIN = 3.7V 150 300
Output Current Limit ILIMxx VOUT = 0V, % of IMAX 103 180 250 %
DYNAMIC CHARACTERISTICS
Soft-Start and Dynamic-Voltage-Change Ramp Rate tSSxx After enabling, (Note 14) SS_Lx = 0 100 mV/μs
After enabling (Note 14) SS_Lx = 1 5
Active Discharge Resistance Output disabled, VOUT = 1V, resistance from OUT_LDOx to GND, active discharge enabled (ADE_Lx = 1) 65 Ω
THERMAL SHUTDOWN
Thermal Shutdown Output disabled or enabled TJ rising 165 °C
TJ falling 150
POWER-OK COMPARATOR
Power-OK Threshold VPOKTHL VOUT when VPOK switches VOUT falling 84 87 %
VOUT rising 92 96
Note 14:  Limits are 100% production tested at TA = +25°C.  Limits over the operating temperature range are guaranteed through correlation using statistical quality control methods.
Note 15:  Does not include ESR of the capacitance or trace resistance of the PCB.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—300mA NMOS LDO (LDO8)
(VSYS = 3.7V, VIN_LDO = 3.7V, CIN_LDO = 1μF, COUT_LDO = 2.2μF. Limits are 100% production tested at TA = +25°C Limits over the operating temperature range (T= -40°C to +85°C) are guaranteed by design and characterization, unless otherwise noted.)
Electrical Characteristics—300mA NMOS LDO (LDO8) (continued)
(VSYS = 3.7V, VIN_LDO = 3.7V, CIN_LDO = 1μF, COUT_LDO = 2.2μF. Limits are 100% production tested at TA = +25°C Limits over the operating temperature range (T= -40°C to +85°C) are guaranteed by design and characterization, unless otherwise noted.)
GENERAL CHARACTERISTICS
Input Voltage Range VIN_LDOx Guaranteed by output accuracy VOUT 5.5 V
Output Voltage Range VOUTxx VINxx is the maximum of 3.7 or VOUT+0.3V 50mV/step (6-bit), LDO8 0.8 3.95 V
Maximum Output Current IMAXxx Guaranteed by output accuracy Normal mode 300 mA
Low-power mode 5
CORE PERFORMANCE SPECIFICATIONS
Output Voltage Accuracy Normal mode VIN = VNOM + 0.3V to 5.5V, IOUT = 0.1mA to IMAX, VNOM set to any voltage, VMBATT = VNOM + 1.5V with 2.45V minimum -3 +3 %
Low-power mode VIN = VNOM + 0.3V to 5.5V, IOUT = 0.1mA to 5mA, VNOM set to any voltage, VMBATT = VNOM + 1.5V with 2.45V minimum -5 +5
Load Regulation (Note 15) Normal mode IOUT = 0.1mA to IMAX, VIN = VNOM+0.3V,  VMBATT = VNOM+1.5V with 2.45V minimum  0.05 %
Low-power mode IOUT = 0.1mA to 5mA, VIN = VNOM+0.3V, VMBATT = VNOM+1.5V with 2.45V minimum 0.05
Line Regulation (Note 15) Normal mode VIN = VNOM+0.3V to 5.5V, IOUT = 0.1mA 0.01 %/V
Line Regulation (Note15) Low-power mode VMBATT = VNOM + 0.3V to 5.5V with 2.45V minimum, VIN = VNOM + 0.3V to 5.5V, IOUT = 0.1mA 0.01 %/V
Dropout Voltage VDOxx Normal mode, IOUT = IMAX VMBATT-VOUT = 2.5V 50 100 mV
VMBATT-VOUT = 1.7V 150 450
Low-power mode, IOUT = 5mA, VIN = 3.7V 150 300
Output Current Limit ILIMxx VOUT = 0V, % of IMAX 110 180 250 %
DYNAMIC CHARACTERISTICS
Soft-Start and Dynamic-Voltage-Change Ramp Rate tSSxx After enabling (Note 16) SS_Lx = 0 100 mV/μs
SS_Lx = 1 5
Active Discharge Resistance Output disabled, VOUT = 1V, resistance from OUT_LDOx to GND, active discharge enabled (ADE_Lx = 1) 65 Ω
THERMAL SHUTDOWN
Thermal Shutdown Output disabled or enabled TJ rising 165 °C
TJ falling 150
POWER-OK COMPARATOR
Power-OK Threshold VPOKTHL VOUT when VPOK switches VOUT falling 84 87 %
VOUT rising 92 96
Note 16:  Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range are guaranteed through correlation using statistical quality control methods.
Note 17:  Does not include ESR of the capacitance or trace resistance of the PCB.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—450mA NMOS LDO (LDO7)
(VSYS = 3.7V, VIN_LDO = 3.7V, CIN_LDO = 1μF, COUT_LDO = 2.2μF. Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range (T= -40°C to +85°C) are guaranteed by design and characterization, unless otherwise noted.)
Electrical Characteristics—450mA NMOS LDO (LDO7) (continued)
(VSYS = 3.7V, VIN_LDO = 3.7V, CIN_LDO = 1μF, COUT_LDO = 2.2μF. Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range (T= -40°C to +85°C) are guaranteed by design and characterization, unless otherwise noted.)
GENERAL CHARACTERISTICS
Input Voltage Range VIN_LDOx Guaranteed by output accuracy VOUT 5.5 V
Output Voltage Range VOUTxx VINxx is the maximum of 3.7 or VOUT+0.3V 50mV/step (6-bit), LDO7 0.8 3.95 V
Maximum Output Current IMAXxx Guaranteed by output accuracy Normal mode 450 mA
Low-power mode 5
CORE PERFORMANCE SPECIFICATIONS
Output Voltage Accuracy Normal mode VIN = VNOM+0.3V to 5.5V, IOUT = 0.1mA to IMAX, VNOM set to any voltage, VMBATT = VNOM+1.5V with 2.45V minimum -3 +3 %
Low-power mode VIN = VNOM+0.3V to 5.5V, IOUT = 0.1mA to 5mA, VNOM set to any voltage, VMBATT = VNOM+1.5V with 2.45V minimum -5 +5
Load Regulation (Note 15) Normal mode IOUT = 0.1mA to IMAX, VIN = VNOM+0.3V,  VMBATT = VNOM+1.5V with 2.45V minimum  0.05 %
Low-power mode IOUT = 0.1mA to 5mA, VIN = VNOM+0.3V, VMBATT = VNOM + 1.5V with 2.45V minimum 0.05
Line Regulation (Note 15) Normal mode VIN = VNOM+0.3V to 5.5V, IOUT = 0.1mA 0.01 %/V
Low-power mode VMBATT = VNOM+0.3V to 5.5V with 2.45V minimum, VIN = VNOM+0.3V to 5.5V, IOUT = 0.1mA 0.01
Dropout Voltage VDOxx Normal mode, IOUT = IMAX VMBATT-VOUT = 2.5V 50 100 mV
VMBATT-VOUT = 1.5V 150 450
Low-power mode, IOUT = 5mA, VIN = 3.7V 150 300
Output Current Limit ILIMxx VOUT = 0V, % of IMAX 110 180 250 %
DYNAMIC CHARACTERISTICS
Soft-Start and Dynamic-Voltage-Change Ramp Rate tSSxx After enabling, (Note 18) SS_Lx = 0 100 mV/μs
After enabling (Note 18) SS_Lx = 1 5
Active Discharge Resistance Output disabled, VOUT=1V, resistance from OUT_LDOx to GND, active discharge enabled (ADE_Lx = 1) 65 Ω
THERMAL SHUTDOWN
Thermal Shutdown Output disabled or enabled TJ rising 165 °C
TJ falling 150
POWER-OK COMPARATOR
Power-OK Threshold VPOKTHL VOUT when VPOK switches VOUT falling 84 87 %
VOUT rising 92 96
Note 18:  Does not include ESR of the capacitance or trace resistance of the PCB.
Note 19:  During a soft-start event or a DVS transition, the regulators output current increases by COUT x dV/dt.  In the event that the load current plus the additional current imposed by the soft-start or DVS transition reach the regulator’s current limit, the current limit is enforced.  When the current limit is enforced, the advertised transition rate (dV/dt) does not occur.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—GPIO
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
Electrical Characteristics—GPIO (continued)
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
POWER SUPPLY
Power-Supply Voltage VMBATT GPIO0-3 (Note 20) 2.6 5.5 V
VGPIO_INB GPIO4-7 (Note 20) 1.7 5.5
Supply Current IGPIO_INB GPIO configured as input and connected to ground 1 µA
GPIO INPUT
Input Voltage Low VIL GPIO0-3, VMBATT = 2.6V to 5.5V
GPIO4-7, VIN_GPIOB = 1.7V to 5.5V
0.5 V
Input Voltage High VIH GPIO0-3, VMBATT = 2.6V to 5.5V 0.7 x VMBATT V
GPIO4-7, VIN_GPIOB = 1.7V to 5.5V 0.7 x VGPIO_INB
Input Hysteresis VHYS_GPIO 0.25 V
Input Leakage Current ILKG_GPIOx VIN_GPIOB = VMBATT = 5.5V, VGPIOx = 0V and 5.5V, internal pull-up/down disabled  TA = +25°C 0.001 1 µA
 TA = +85°C 0.01
GPIO OUTPUT
Output Voltage Low VOL ISINK = 4mA, open-drain and push-pull mode 0.08 V
ISINK = 12mA, open-drain and push-pull mode 0.25
Output Voltage High VOH GPIO4-7 VIN_GPIOB = 1.7V, ISOURCE = 4mA 0.7 x VIN_GPIOB V
GPIO0-3 VMBATT = 3.6, ISOURCE = 4mA 0.7 x VMBATT
GPIO Open Leakage Current VIN_GPIOB = VMBATT = 5.5V  T= +25°C 0.01 1 μA
T= +85°C 0.1
INTERNAL RESISTANCE
Pullup Resistance RPU_GPIO 50 100 160
Pulldown Resistance RPD_GPIO 50 100 160
Note 20:  Guaranteed by VIH and VIL tests.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—32kHz Oscillator
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
Electrical Characteristics—32kHz Oscillator (continued)
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
CRYSTAL OSCILLATOR
Crystal-Oscillator Supply Voltage VRTC (Note 21) 1.71 2.5 V
Crystal Loading 32KLOAD = 0b01 (Note 22) 6.5 pF
32KLOAD = 0b10 (Note 22) 7.5
32KLOAD = 0b11 (Note 22) 12.5
BYPASS MODE
XIN I/O Voltage VRTC Maximum VRTC external load of 1mA
VRTC V
XIN Input Low Voltage VXIN_IL 0 0.4 V
XIN Input High Voltage VXIN_IH VRTC - 0.4 VRTC V
XIN Input Hysteresis 400 mV
XIN Input Leakage Current TA = +25°C -1 +1 μA
SILICON OSCILLATOR
Silicon-Oscillator Supply Voltage VRTC 1.71 2.5 V
Silicon-Oscillator Output Frequency 32768 Hz
VALID FREQUENCY DETECTOR
Valid XOSCOK Signal Minimum Frequency fDET_MIN 10 kHz
Valid XOSCOK Signal Maximum Frequency fDET_MAX 110 kHz
OK32K Signal Debounce (Note 23) Primary crystal oscillator (XOSCOK) 256 cycles
Backup silicon oscillator (XOSCOK) 32
Note 21:  Minimum supply for basic functionality with reduced accuracy.
Note 22:  Includes 3pF of parasitic capacitance on XIN and XOUT.
Note 23:  Number of valid cycles the frequency detector needs to count before it asserts OK32K.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics—Backup Battery Charger
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
Electrical Characteristics—Backup Battery Charger (continued)
(VSYS = 3.6V, TA = -40°C to +85°C, limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization. Specifications marked "GBD" are guaranteed by design and not production tested.)
BACKUP BATTERY CHARGER
Programmable Output Voltage Range ILOAD = 1μA BBCVS[1:0] = 0x00 2.420 2.500 2.580 V
BBCVS[1:0] = 0x01 2.910 3.000 3.090
BBCVS[1:0] = 0x02 3.200 3.300 3.400
BBCVS[1:0] = 0x03 3.395 3.500 3.605
Constant Current Limit VBBATT short to GND, BBCLOWIEN = 0 BBCCS[1:0] = 0x00, 0x01, 0x02 50 µA
BBCCS[1:0] = 0x03 100
VBBATT short to GND, BBCLOWIEN = 1 BBCCS[1:0] = 0x00 200
BBCCS[1:0] = 0x00 600
BBCCS[1:0] = 0x02 800
BBCCS[1:0] = 0x03 400
Output Resistance BBCRS[1:0] = 0x00 0.1
BBCRS[1:0] = 0x01 1
BBCRS[1:0] = 0x02 3
BBCRS[1:0] = 0x03 6
Reverse Leakage Current from BBATT to VMBATT Input = 0V, VBBATT = 3.0V T= +25°C 0.01 10 μA
T= +85°C 0.1
Typical Operating Characteristics

(AVVDD = +3.3V, VDDIO = +1.8V, VREFP - VREFN = VREF = 2.5V; No Line-Frequency Rejection, Continuous-Conversion Mode, Internal Clock; TA = TMIN to TMAX unless otherwise noted.)

EFFICIENCY vs. LOAD CURRENT SD0
VOUT=0.9V
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EFFICIENCY vs. LOAD CURRENT SD0
VOUT=1.0V
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EFFICIENCY vs. LOAD CURRENT SD0
VOUT=1.1V
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image/svg+xml
EFFICIENCY vs. LOAD CURRENT SD1
VOUT=1.0V
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EFFICIENCY vs. LOAD CURRENT SD1
VOUT=1.2V
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image/svg+xml