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非易失RAM控制器

产品详情

主要特征

Parametric specs for Battery Backup Circuits
Reset Thresh. (V) 3.3 to 5.5
Reset Out No
ICC (µA) (max) 500
Oper. Temp. (°C) -55 to +125
-40 to +85
0 to +70
Package/Pins PDIP/8
SOIC (N)/8
SOIC (W)/16
Budgetary
Price (See Notes)
3.86
Parametric specs for Non-Volatile RAM Controllers
CE Cntrl. Yes
Smart Socket w/Int. Batt. No
Li Batt. Monitor No
Pwr. Fail Out No
RAMs Controlled 1
VSUPPLY (V) 5
Package/Pins PDIP/8
SOIC (N)/8
SOIC (W)/16
缩小

简化框图

Technical Docs

数据资料 非易失RAM控制器 Jun 30, 2006

支持和培训

在Maxim的知识库中搜索技术问题的答案

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参量

Parametric specs for Battery Backup Circuits
Reset Thresh. (V) 3.3 to 5.5
Reset Out No
ICC (µA) (max) 500
Oper. Temp. (°C) -55 to +125
-40 to +85
0 to +70
Package/Pins PDIP/8
SOIC (N)/8
SOIC (W)/16
Budgetary
Price (See Notes)
3.86
Parametric specs for Non-Volatile RAM Controllers
CE Cntrl. Yes
Smart Socket w/Int. Batt. No
Li Batt. Monitor No
Pwr. Fail Out No
RAMs Controlled 1
VSUPPLY (V) 5
Package/Pins PDIP/8
SOIC (N)/8
SOIC (W)/16

主要特征

  • Battery Backup
  • Memory Write Protection
  • 230µA Operating-Mode Quiescent Current
  • 2nA Backup-Mode Quiescent Current
  • Battery Freshness Seal
  • Optional Redundant Battery
  • Low Forward-Voltage Drop on VCC Supply Switch
  • 5% or 10% Power-Fail Detection Options
  • Tests Battery Condition During Power-Up
  • 8-Pin SO Available

应用/用途

  • µP控制系统
  • 计算机:台式机、工作站和服务器
  • 嵌入式系统

描述

The MXD1210 nonvolatile RAM controller is a very low-power CMOS circuit that converts standard (volatile) CMOS RAM into nonvolatile memory. It also continually monitors the power supply to provide RAM write protection when power to the RAM is in a marginal (out-of-tolerance) condition. When the power supply begins to fail, the RAM is write protected, and the device switches to battery-backup mode.

简化框图

MXD1210:典型工作电路 MXD1210:典型工作电路 Zoom icon

Technical Docs

数据资料 非易失RAM控制器 Jun 30, 2006

支持和培训

在Maxim的知识库中搜索技术问题的答案

过滤搜索

Maxim的专业工程师团队也会为您解答相应的技术问题,请访问Maxim的 支持中心