/
/
/
电路监控、电压监测器及排序器 
/
回到顶部
MyMaxim 订阅产品详情
Parametric specs for Battery Backup Circuits
| Reset Thresh. (V) | 3.3 to 5.5 |
| Reset Out | No |
| ICC (µA) (max) | 500 |
| Oper. Temp. (°C) | -55 to +125 -40 to +85 0 to +70 |
| Package/Pins | PDIP/8 SOIC (N)/8 SOIC (W)/16 |
| Budgetary Price (See Notes) | 3.86 |
Parametric specs for Non-Volatile RAM Controllers
| CE Cntrl. | Yes |
| Smart Socket w/Int. Batt. | No |
| Li Batt. Monitor | No |
| Pwr. Fail Out | No |
| RAMs Controlled | 1 |
| VSUPPLY (V) | 5 |
| Package/Pins | PDIP/8 SOIC (N)/8 SOIC (W)/16 |
缩小
简化框图
Technical Docs
| 数据资料 | 非易失RAM控制器 | Jun 30, 2006 |
参量
Parametric specs for Battery Backup Circuits
| Reset Thresh. (V) | 3.3 to 5.5 |
| Reset Out | No |
| ICC (µA) (max) | 500 |
| Oper. Temp. (°C) | -55 to +125 -40 to +85 0 to +70 |
| Package/Pins | PDIP/8 SOIC (N)/8 SOIC (W)/16 |
| Budgetary Price (See Notes) | 3.86 |
Parametric specs for Non-Volatile RAM Controllers
| CE Cntrl. | Yes |
| Smart Socket w/Int. Batt. | No |
| Li Batt. Monitor | No |
| Pwr. Fail Out | No |
| RAMs Controlled | 1 |
| VSUPPLY (V) | 5 |
| Package/Pins | PDIP/8 SOIC (N)/8 SOIC (W)/16 |
主要特征
- Battery Backup
- Memory Write Protection
- 230µA Operating-Mode Quiescent Current
- 2nA Backup-Mode Quiescent Current
- Battery Freshness Seal
- Optional Redundant Battery
- Low Forward-Voltage Drop on VCC Supply Switch
- 5% or 10% Power-Fail Detection Options
- Tests Battery Condition During Power-Up
- 8-Pin SO Available
应用/用途
- µP控制系统
- 计算机：台式机、工作站和服务器
- 嵌入式系统
描述
The MXD1210 nonvolatile RAM controller is a very low-power CMOS circuit that converts standard (volatile) CMOS RAM into nonvolatile memory. It also continually monitors the power supply to provide RAM write protection when power to the RAM is in a marginal (out-of-tolerance) condition. When the power supply begins to fail, the RAM is write protected, and the device switches to battery-backup mode.
Technical Docs
| 数据资料 | 非易失RAM控制器 | Jun 30, 2006 |
询价申请