回到顶部
产品详情
主要特征
简化框图
Technical Docs
数据资料 | 1带8非易失控制器芯片 | Nov 18, 1999 |
支持和培训
采样:
选择上方“样片”按钮将重定向至第三方ADI样片网站。登录后,所选部件将转移到您在此网站上的购物车。如果您之前从未使用过此网站,请创建一个新帐户。有关此样片网站的任何问题,请联系SampleSupport@analog.com。
主要特征
- Controller circuitry with monitoring and logic functions to make CMOS RAM nonvolatile
- Controls up to 8 memories
- Monitors Vcc and write-protects when out of tolerance
- Consumes less than 100nA battery current
- Tests battery condition on power-up
- Supports redundant batteries
- Thermal operating ranges:
- DS1211: 0°C to +70°C
- DS1211-IND: -40° to +85°C
- Voltage/tolerances: 5V ±5% or ±10%
应用/用途
描述
The DS1211 Nonvolatile Controller x8 Chip performs five circuit functions required to render standard CMOS RAM nonvolatile:
Monitor Vcc using a precise comparator that detects power-fail and inhibits chip-enable Monitor battery status and warn the processor of low status Switch power between a battery and Vcc, whichever is greater Write-protect data Provide for automatically switching between two batteries Power-fail detection occurs in the range of 4.75V to 4.5V with the tolerance Pin 3 grounded. If Pin 3 in connected to Vcco, then power-fail detection occurs in the range of 4.5 volts to 4.25 volts.
By combining the DS1211 nonvolatile controller/decoder chip and lithium batteries, nonvolatile RAM operation can be achieved for up to eight CMOS memories.
By combining the DS1211 nonvolatile controller/decoder chip and lithium batteries, nonvolatile RAM operation can be achieved for up to eight CMOS memories.
Technical Docs
数据资料 | 1带8非易失控制器芯片 | Nov 18, 1999 |
支持和培训
采样:
选择上方“样片”按钮将重定向至第三方ADI样片网站。登录后,所选部件将转移到您在此网站上的购物车。如果您之前从未使用过此网站,请创建一个新帐户。有关此样片网站的任何问题,请联系SampleSupport@analog.com。