General Reliability Reports

Maxim Process Reliability Reports

PR-1 (PDF, 29kB)
In response to the increasing demand for plastic packaged products for use in critical applications, Maxim has developed a high-reliability screening flow for plastic encapsulated packages, including SOICs. Products screened to this flow can be used in high-reliability applications where hermetically sealed devices, screened to MIL-STD-833, may not be justified. SOICs with full burn-in and screening not only offer excellent reliability but also save valuable PC board space. This screening includes many of the requirements common to -883 devices, such as burn-in at +125°C and electrical screening at -55°C to +125°C.
RR-1G (PDF, 89kB)
Product reliability data for Maxim's analog products, separated into four groups: Standard Metal-Gate CMOS (SMG); Medium-Voltage Metal-Gate CMOS (MV); Silicon-Gate CMOS (SG); and bipolar (BIP) processes. For 1990 to 1992.
RR-1H (PDF, 134kB)
Product reliability data for Maxim's analog products, separated into six fabrication processes: (1) Standard Metal-Gate CMOS (SMG); (2) Medium-Voltage Metal-Gate CMOS (MV); (3) Medium-Voltage Silicon-Gate CMOS (MV2); (4) 3µm Silicon-Gate CMOS (SG3); (5) 5µm Silicon-Gate CMOS (SG5); and (6) Bipolar (BIP) processes. For January 1990 to January 1994.
RR-1I (PDF, 132kB)
Product reliability data for Maxim's analog products, separated into seven fabrication processes: (1) Standard Metal-Gate CMOS (SMG); (2) Medium-Voltage Metal-Gate CMOS (MV); (3) Medium-Voltage Silicon-Gate CMOS (MV2); (4) 3µm Silicon-Gate CMOS (SG3); (5) 5µm Silicon-Gate CMOS (SG5); (6) 1.2µm Silicon-Gate CMOS; and (7) Bipolar (BIP) processes. For 1994.
RR-1J (PDF, 147kB)
Product reliability data for Maxim's analog products, separated into six fabrication processes: (1) Standard Metal-Gate CMOS (SMG); (2) Medium-Voltage Metal-Gate CMOS (MV); (3) Medium-Voltage Silicon-Gate CMOS (MV2); (4) 3µm Silicon-Gate CMOS (SG3); (5) 5µm Silicon-Gate CMOS (SG5); and (6) Bipolar (BIP) processes. For 1995.
RR-1K (PDF, 166kB)
Product reliability data for Maxim's analog products, separated into seven fabrication processes: (1) Standard Metal-Gate CMOS (SMG); (2) Medium-Voltage Metal-Gate CMOS (MV1); (3) Medium-Voltage Silicon-Gate CMOS (MV2); (4) 3µm Silicon-Gate CMOS (SG3); (5) 5µm Silicon-Gate CMOS (SG5); (6) 1.2µm Silicon-Gate CMOS; and (7) Bipolar (BIP) processes. For 1996.
RR-1L (PDF, 347kB)
Product reliability data for Maxim's analog products, separated into seven fabrication processes: (1) Standard Metal-Gate CMOS (SMG); (2) Medium-Voltage Metal-Gate CMOS (MV1); (3) Medium-Voltage Silicon-Gate CMOS (MV2); (4) 3µm Silicon-Gate CMOS (SG3); (5) 5µm Silicon-Gate CMOS (SG5); (6) 1.2µm Silicon-Gate CMOS (SG1.2); and (7) Bipolar (BIP) processes. For 1997-1998.
RR-1M (PDF, 130kB)
Product reliability data for Maxim's analog products, separated into nine fabrication processes: (1) Standard Metal-Gate CMOS (SMG); (2) Medium-Voltage Metal-Gate CMOS (MV1); (3) Medium-Voltage Silicon-Gate CMOS (MV2); (4) 3µm Silicon-Gate CMOS (SG3); (5) 5µm Silicon-Gate CMOS (SG5); (6) 1.2µm Silicon-Gate CMOS (SG1.2); (7) 0.8µm Silicon-Gate CMOS; (8) 0.6µm Silicon Gate CMOS; and (9) Bipolar (BIP) processes. For 1999-2000.
RR-1N (PDF, 147kB)
Product reliability data for Maxim's analog products, separated into ten fabrication processes: (1) Standard Metal-Gate CMOS (SMG); (2) Medium-Voltage Metal-Gate CMOS (M6HV); (3) Medium-Voltage Silicon-Gate CMOS (S5HV); (4) 5µm Silicon-Gate CMOS (SG5); (5) 3µm Silicon-Gate CMOS (S3); (6) 1.2µm Silicon-Gate CMOS (S12); (7) 0.8µm Silicon-Gate CMOS (S8); (8) 0.6µm Silicon Gate CMOS (S6); (9) 80V Bipolar CMOS DMOS (BCD80) and (10) 1.2µm BiCMOS (HV3). For 2001-2002.
RR-2B (PDF, 52kB)
Reliability data for Maxim's surface-mount devices, including the results of extensive reliability stress tests performed solely on epoxy surface-mount packages since 1991.
RR-2C (PDF, 407kB)
Reliability data for Maxim's surface-mount devices, including the results of extensive reliability stress tests performed solely on epoxy surface-mount packages since 1995.
RR-B1A (PDF, 89kB)
Product reliability data for Maxim's high-frequency Bipolar analog and digital products, separated into four major fabrication processes: (1) SHPi, 9.3GHz two-layer bipolar; (2) GST-1, 12GHz three-layer bipolar; (3) GST-2, 27GHz three-layer bipolar, and (4) CPi, 9.3GHz two-layer with complementary vertical PNP devices to 5.5GHz. For June 1, 1994, to July 1, 1995.
RR-B2A (PDF, 129kB)
Product reliability data for Maxim's high-frequency bipolar analog and digital products, separated into five major fabrication processes: (1) SHPi, 9.3GHz two-layer bipolar; (2) GST-1, 12GHz three-layer bipolar; (3) GST-2, 27GHz three-layer bipolar; (4) CPi, 9.3GHz two-layer with complementary vertical PNP devices to 5.5GHz; and (5) CB2, 9.4GHz two-layer with complementary vertical PNP devices to 8.7GHz. For June 1, 1994, to January 1, 1997.
RR-B3A (PDF, 167kB)
Product reliability data for Maxim's high-frequency bipolar analog and digital products, separated into eight major fabrication processes: (1) GST-1, 12GHz three-layer bipolar; (2) GST-2, 27GHz three-layer bipolar; (3) GST-3 SiGe HBT Bipolar; (4) GST-4 SiGe HBT BiCmos (5) CPi, 9.3GHz two-layer with complementary vertical PNP devices to 5.5GHz; (6) CB2, 9.4GHz two-layer with complementary vertical PNP devices to 8.7GHz; (7) CB3 Dual Poly Emitter Complimentary Bipolar; and (8) MB1 Dual Poly Emitter 0.8 micron BiCMOS. For January 1, 1997, to January 1, 2003.