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DS1220Y

16K Nonvolatile SRAM

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Status Explanations for product status codes

Part Number Status Replacement Explanation
DS1220Y This product is Not Recommended for New Designs. Some versions may be No Longer Available or being discontinued and subject to Last Time Buy, after which new orders can not be placed. See Ordering Information for details. DS1220AD
 
Replacement units for existing systems are still available. Do not substitute product types.

1) Write protection voltage (VTP) on the DS1220Y and DS1225Y are determined by an internal voltage-divider circuit (~1.26 x VBAT). As the internal battery in the module degrades, the corresponding VTP also degrades, resulting in a change in the response of the module to system power loss. The AB/AD versions have a precision band-gap reference voltage that is independent of the battery.

2) Storage and handling of battery-backed products can be critical to achieve the expected 10 years of potential data retention from a new module. The DS1220Y and DS1225Y do not contain the Freshness Seal circuitry, which means the 10 year warranty begins with date of manufacture, as opposed to the date of customer's first use on AB/AD versions. 

Description

The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Data Sheet

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This product contains lithium-metal batteries. See applicable regulations for transport requirements for batteries in equipment.

Key Features

  • 10 years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Directly replaces 2k x 8 volatile static RAM or EEPROM
  • Unlimited write cycles
  • Low-power CMOS
  • JEDEC standard 24-pin DIP package
  • Read and write access times of 100ns
  • Full ±10% operating range
  • Optional industrial temperature range of -40°C to +85°C, designated IND
  • Underwriters Laboratories (UL) Recognized
   
   

More Information

New Product Press Release   2001-06-19 ]
UL Certified

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Document Ref.: 19-5579 Rev 2; 2010-10-19
This page last modified: 2010-10-19